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HUF76143P3 Datasheet(PDF) 2 Page - Intersil Corporation

Part No. HUF76143P3
Description  75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
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Maker  INTERSIL [Intersil Corporation]
Homepage  http://www.intersil.com/cda/home
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HUF76143P3 Datasheet(HTML) 2 Page - Intersil Corporation

 
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6-167
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
30
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±16
V
Drain Current
Continuous (TC = 25
oC, V
GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TC = 100
oC, V
GS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Continuous (TC = 100
oC, V
GS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
75
75
75
Figure 4
A
A
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
225
1.8
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-40 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 150oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V (Figure 12)
30
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 25V, VGS = 0V
-
-
1
µA
VDS = 25V, VGS = 0V, TC = 150
oC
-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±16V
-
-
±100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA (Figure 11)
1
-
3
V
Drain to Source On Resistance
rDS(ON)
ID = 75A, VGS = 10V (Figures 9, 10)
-
0.0052
0.0055
ID = 75A, VGS = 5V (Figure 9)
-
0.0063
0.0075
ID = 75A, VGS = 4.5V (Figure 9)
-
0.0068
0.0085
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
RθJC
(Figure 3)
-
-
0.55
oC/W
Thermal Resistance Junction to Ambient
RθJA
TO-220 and TO-263
-
-
62
oC/W
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time
tON
VDD = 15V, ID ≅ 75A,
RL = 0.2Ω, VGS = 4.5V,
RGS = 2.5Ω
(Figures 15, 21, 22)
-
-
250
ns
Turn-On Delay Time
td(ON)
-22-
ns
Rise Time
tr
-
145
-
ns
Turn-Off Delay Time
td(OFF)
-30-
ns
Fall Time
tf
-18-
ns
Turn-Off Time
tOFF
-
-
72
ns
HUF76143P3, HUF76143S3S


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