![]() |
Electronic Components Datasheet Search |
|
HUF76143P3 Datasheet(PDF) 8 Page - Intersil Corporation |
|
HUF76143P3 Datasheet(HTML) 8 Page - Intersil Corporation |
8 / 10 page ![]() 6-173 PSPICE Electrical Model SUBCKT HUF76143 2 1 3 ; REV March 1998 CA 12 8 5.2e-9 CB 15 14 5e-9 CIN 6 8 3.65e-9 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 39.38 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 2.6e-9 LSOURCE 3 7 1.1e-9 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 1.5e-3 RGATE 9 20 0.92 RLDRAIN 2 5 10 RLGATE 1 9 26 RLSOURCE 3 7 11 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 3e-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*425),4))} .MODEL DBODYMOD D (IS = 1.2e-11 RS = 2.65e-3 TRS1 = 2.3e-3 TRS2 = -4.2e-6 CJO = 5.45e-9 TT = 3.9e-8 XTI = 4.3 N = 1.03 M = 0.43) .MODEL DBREAKMOD D (RS = 8.5e-2 TRS1 =0 TRS2 =0) .MODEL DPLCAPMOD D (CJO = 2.6e-9 IS = 1e-30 N = 10 M = 0.7) .MODEL MMEDMOD NMOS (VTO = 1.9 KP = 10 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.92) .MODEL MSTROMOD NMOS (VTO = 2.26KP = 215 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 1.62 KP = 0.1 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 9.2 RS = 0.1) .MODEL RBREAKMOD RES (TC1 = 9.8e-4 TC2 = -4e-7) .MODEL RDRAINMOD RES (TC1 = 1e-2 TC2 = 0) .MODEL RSLCMOD RES (TC1 = 3e-3 TC2 = -2e-5) .MODEL RSOURCEMOD RES (TC1 = 5e-4 TC2 = 1.1e-5) .MODEL RVTHRESMOD RES (TC = -2.2e-3 TC2 = -6e-6) .MODEL RVTEMPMOD RES (TC1 = -1.45e-3 TC2 = -2e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5 VOFF= -2) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2 VOFF= -5) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF= 1) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1 VOFF= -1.5) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. 18 22 + - 6 8 + - 5 51 19 8 + - 17 18 6 8 + - 5 8 + - RBREAK RVTEMP VBAT RVTHRES IT 17 18 19 22 12 13 15 S1A S1B S2A S2B CA CB EGS EDS 14 8 13 8 14 13 MWEAK EBREAK DBODY RSOURCE SOURCE 11 7 3 LSOURCE RLSOURCE CIN RDRAIN EVTHRES 16 21 8 MMED MSTRO DRAIN 2 LDRAIN RLDRAIN DBREAK DPLCAP ESLC RSLC1 10 5 51 50 RSLC2 1 GATE RGATE EVTEMP 9 ESG LGATE RLGATE 20 + - + - + - 6 HUF76143P3, HUF76143S3S |