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HS-82C37ARH Datasheet(PDF) 1 Page - Intersil Corporation

Part No. HS-82C37ARH
Description  Radiation Hardened CMOS High Performance Programmable DMA Controller
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Maker  INTERSIL [Intersil Corporation]
Homepage  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

HS-82C37ARH Datasheet(HTML) 1 Page - Intersil Corporation

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright
© Intersil Corporation 1999
Radiation Hardened CMOS High
Performance Programmable DMA Controller
The Intersil HS-82C37ARH is an enhanced, radiation
hardened CMOS version of the industry standard 8237A
Direct Memory Access (DMA) controller, fabricated using the
Intersil hardened field, self-aligned silicon gate CMOS
process. The HS-82C37ARH offers increased functionality,
improved performance, and dramatically reduced power
consumption for the radiation environment. The high speed,
radiation hardness, and industry standard configuration of
the HS-82C37ARH make it compatible with radiation
hardened microprocessors such as the HS-80C85RH and
the HS-80C86RH.
The HS-82C37ARH can improve system performance by
allowing external devices to transfer data directly to or from
system memory. Memory-to-memory transfer capability is
also provided, along with a memory block initialization
feature. DMA requests may be generated by either
hardware or software, and each channel is independently
programmable with a variety of features for flexible
Static CMOS circuit design insures low operating power and
allows gated clock operation for an even further reduction of
power. Multimode programmability allows the user to select
from three basic types of DMA services, and reconfiguration
under program control is possible even with the clock to the
controller stopped. Each channel has a full 64K address and
word count range, and may be programmed to autoinitialize
these registers following DMA termination (end of process).
The Intersil hardened field CMOS process results in
performance equal to or greater than existing radiation resis-
tant products at a fraction of the power.
• Radiation Hardened
- Total Dose >105 RAD (Si)
- Transient Upset > 108 RAD (Si)/s
- Latch Up Free EPI-CMOS
• Low Power Consumption
- IDDSB = 50
µA Maximum
- IDDOP = 4.0mA/MHz Maximum
• Pin Compatible with NMOS 8237A and the Intersil
• High Speed Data Transfers Up To 2.5 MBPS With 5MHz
• Four Independent Maskable Channels With Autoinitializa-
tion Capability
• Expandable to Any Number of Channels
• Memory-to-Memory Transfer Capability
• CMOS Compatible
• Hardened Field, Self-Aligned, Junction Isolated CMOS
• Single 5V Supply
• Military Temperature Range -55oC to +125oC
August 1995
Spec Number
File Number
Ordering Information
-55oC to +125oC
40 Lead SBDIP
-55oC to +125oC
40 Lead SBDIP
40 Lead SBDIP
-55oC to +125oC
42 Lead Ceramic Flatpack
-55oC to +125oC
42 Lead Ceramic Flatpack
42 Lead Ceramic Flatpack

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