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HS-4080ARH Datasheet(PDF) 4 Page - Intersil Corporation

Part No. HS-4080ARH
Description  Radiation Hardened Full Bridge N-Channel FET Driver
Download  4 Pages
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Maker  INTERSIL [Intersil Corporation]
Homepage  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

HS-4080ARH Datasheet(HTML) 4 Page - Intersil Corporation

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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Die Characteristics
DIE DIMENSIONS:
4760
µm x 5660µm (188 mils x 223 mils)
Thickness: 483
µm ±25.4µm (19 mils ±1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: Phosphorus Silicon Glass
Thickness: 8.0k
Å
±1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0k
Å
±2kÅ
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
432
Metallization Mask Layout
HS-4080ARH
15
14
13
12
11
10
9
8
7
6
16
17
18
19
20
1
2
3
4
5
HS-4080ARH


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