SI9410DY datasheet(2/4 Pages) KEXIN

Part #	SI9410DY

Description	N-Channel MOSFET

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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MOSFET

N-Channel MOSFET

SI9410DY (KI9410DY)

■

Electrical Characteristics Ta = 25℃

Note.1:Pulse test; pulse width ≤ 300us, duty cycle ≤ 2%.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=250μA, VGS=0V

30

V

VDS=24V, VGS=0V

2

VDS=24V, VGS=0V, TJ=55℃

25

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±20V

±

100

nA

Gate Threshold Voltage

VGS(th)

VDS=VGS , ID=250μA

1

3

V

VGS=10V, ID=7A

(Note.1)

30

VGS=5V, ID=4A

(Note.1)

40

VGS=4.5V, ID=3.5A

(Note.1)

50

On-State Drain Current

IDS(on)

VDS≥5 V, VGS = 10 V

30

A

Forward Transconductance

gFS

VDS=15V, ID=7A

(Note.1)

15

S

Total Gate Charge

Qg

24

50

Gate Source Charge

Qgs

2.8

Gate Drain Charge

Qgd

4.6

Turn-On DelayTime

td(on)

14

30

Turn-On Rise Time

tr

10

60

Turn-Off DelayTime

td(off)

46

150

Turn-Off Fall Time

tf

17

140

Body Diode Reverse Recovery Time

trr

IF= 2A, dI/dt= 100A/μs

60

Maximum Body-Diode Continuous Current

IS

2.8

A

Diode Forward Voltage

VSD

IS=2A,VGS=0V

(Note.1)

1.1

V

nC

ns

Zero Gate Voltage Drain Current

IDSS

μ

A

mΩ

VGS=10V, VDS=25V, RL=25Ω,RGEN=6Ω

ID=1A

RDS(On)

Static Drain-Source On-Resistance

VGS=10V, VDS=15V, ID=7A

■

Marking

9410

KC****

Marking

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SI9410DY Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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