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IRLML0100 Datasheet(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd

Part # IRLML0100
Description  N-Channel MOSFET
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

IRLML0100 Datasheet(HTML) 3 Page - Guangdong Kexin Industrial Co.,Ltd

  IRLML0100 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd IRLML0100 Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd IRLML0100 Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd IRLML0100 Datasheet HTML 4Page - Guangdong Kexin Industrial Co.,Ltd IRLML0100 Datasheet HTML 5Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
3
MOSFET
N-Channel MOSFET
IRLML0100 (KRLML0100)
■
Typical Characterisitics
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
1.5
2.0
2.5
3.0
3.5
VGS, Gate-to-Source Voltage (V)
0.01
0.1
1
10
TJ = 25°C
TJ = 150°C
VDS = 50V
≤
60µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
ID = 1.6A
VGS = 10V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
VGS
TOP
10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
BOTTOM
2.25V
≤
60µs PULSE WIDTH
Tj = 25°C
2.25V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
≤
60µs PULSE WIDTH
Tj = 150°C
2.25V
VGS
TOP
10.0V
4.50V
3.50V
3.30V
3.25V
2.50V
2.35V
BOTTOM
2.25V
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
1
2
3
4
5
6
7
QG Total Gate Charge (nC)
0
4
8
12
16
VDS= 80V
VDS= 50V
VDS= 20V
ID= 1.6A


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