IRF830S datasheet(3/6 Pages) KEXIN

Part #	IRF830S

Description	N-Channel MOSFET

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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3

MOSFET

■

Typical Characterisitics

N-Channel MOSFET

IRF830S (KRF830S)

Fig. 1 - Typical Output Characteristics, T C = 25 °C

Fig. 2 - Typical Output Characteristics, T C = 150 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-R esistance vs. Temperature

Bottom

Top

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

T

C = 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

10 0

10 1

10 0

10 -1

10 1

10 0

10 -1

10 0

10 1

VDS, Drain-to-Source Voltage (V)

Bottom

Top

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

T

C = 150 °C

91064_02

4.5 V

20 µs Pulse Width

V

DS

= 50 V

10 1

10 0

10 -1

VGS, Gate-to-Source Voltage (V)

5

6

7

8

9

10

4

25

°

C

150

°

C

I

D = 3.1 A

V

GS = 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

TJ, Junction Temperature (°C)

- 60 - 40 - 20 0

20 40 60 80 100 120 140 160

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

1500

1250

1000

750

0

250

500

10 0

10 1

VDS, Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS = 0 V, f = 1 MHz

C

iss = Cgs + Cgd , Cds Shorted

C

rss = Cgd

C

oss = Cds + Cgd

10 1

10 0

VSD, Source-to-Drain Voltage (V)

0.4

1.2

1.0

0.8

0.6

25

°

C

150

°

C

V

GS = 0 V

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IRF830S Datasheet(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd

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