FDV301N datasheet(4/4 Pages) KEXIN

Part #	FDV301N

Description	N-Channel MOSFET

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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4

MOSFET

.

0

0.1

0.2

0.3

0.4

0.5

0.6

0

1

2

3

4

5

Q , GATE CHARGE (nC)

g

I = 0.2A

D

15V

V

= 5V

DS

10V

0.5

1

2

5

10

15

25

35

0.01

0.02

0.05

0.1

0.2

0.5

1

V

, DRAI N -SOURCE VOLTAGE (V)

DS

DC

1s

100m

s

10s

1ms

RD

S(O

N)

LIM

IT

V

= 2.7V

SINGLE PULSE

R

= 357 °C/W

T = 25°C

GS

A

θJA

0.001

0.01

0.1

1

10

100 300

0

1

2

3

4

5

SINGLE PULSE TIME (SEC)

SINGLE PULSE

R

=357° C/W

T = 25°C

θJA

A

Figure 10 . Single Pulse Maximum Power

Dissipation.

Figure 11 . Transient Thermal Response Curve .

0.1

0.5

1

2

5

10

25

1

2

3

5

10

20

30

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

C iss

f = 1 MHz

V

= 0V

GS

C oss

C rss

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

0.0001

0.001

0.01

0.1

1

10

100

300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIM E (sec)

Duty Cycle, D = t /t

1

2

R

(t) = r(t) * R

R

= 357 °C/W

θJA

T - T

= P * R

(t)

θ

JA

A

J

P(pk)

t1

t 2

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

N-Channel MOSFET

FDV301N

■

Typical Characterisitics

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FDV301N Datasheet(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

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