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2SK3434-ZJ Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SK3434-ZJ Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 2 page SMD Type www.kexin.com.cn 2 MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 60 V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 10 uA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ± 10 uA Gate to Source Cut-off Voltage VGS(off) VDS=10V , ID=1mA 1.5 2.5 V VGS=10V, ID=24A 20 VGS=4V, ID=24A 31 Forward Transconductance gFS VDS=10V, ID=24A 13 27 S Input Capacitance Ciss 2100 Output Capacitance Coss 340 Reverse Transfer Capacitance Crss 170 Total Gate Charge Qg 40 Gate Source Charge Qgs 7 Gate Drain Charge Qgd 11 Turn-On DelayTime td(on) 40 Turn-On Rise Time tr 400 Turn-Off DelayTime td(off) 120 Turn-Off Fall Time tf 160 Body Diode Reverse Recovery Time trr 43 Body Diode Reverse Recovery Charge Qrr 61 nC Diode Forward Voltage VSD IF=48A,VGS=0V 1 V Static Drain-Source On-Resistance RDS(On) mΩ ns VDD = 30V, ID = 24A, VGS(on)=10V, RG = 10 Ω VGS=0V, VDS=10V, f=1MHz VGS=10V, VDS=48V, ID=48A pF nC IF= 48A, VGS=0, dI/dt= 100A/μs N-Channel MOSFET 2SK3434-ZJ |
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