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2SK3224-Z Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SK3224-Z Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type www.kexin.com.cn 1 MOSFET N-Channel MOSFET 2SK3224-Z ■ Features ● VDS (V) = 60V ● ID = 20 A (VGS = 10V) ● RDS(ON) < 40mΩ (VGS = 10V) ● RDS(ON) < 60mΩ (VGS = 4V) ● Low Ciss : Ciss = 790 pF TYP. 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4 .60 +0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.127 max TO-252 Unit: mm 1 Gate 2 Drain 3 Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 ± 20 + 20,-10 Continuous Drain Current ID 20 Pulsed Drain Current (Note.1) IDM 70 Single Avalanche Current (Note.2) IAS 10 25 1 Single Avalanche Energy (Note.2) EAS 10 mJ Thermal Resistance.Junction- to-Ambient RthJA 125 Thermal Resistance.Junction- to-Case RthJC 5 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 PD W Power Dissipation ℃ /W ℃ V Gate-Source Voltage VGS A Note.1: PW ≤ 10 u s, Duty cycle ≤ 1 % Note.2: Starting TJ = 25 °C, RG = 25 Ω , VGS = 20 V - 0 V Source Body Diode Gate Protection Diode Gate Drain (AC) (DC) Tc = 25°C Ta = 25°C |
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