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UPC2714T Datasheet(PDF) 1 Page - NEC |
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UPC2714T Datasheet(HTML) 1 Page - NEC |
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The UPC2714T and UPC2715T are Silicon Monolithic inte- grated circuits manufactured using the NESAT III process. These devices are suitable for applications which require low power consumption and wide frequency operation. They are designed for low cost, low power consumption gain stages in cellular radios, GPS receivers, and PCN applications. NEC's stringent quality assurance and test procedures en- sure the highest reliability and performance. DESCRIPTION LOW POWER CONSUMPTION SILICON MMIC AMPLIFIER UPC2714T UPC2715T FEATURES • LOW POWER CONSUMPTION: 15 mW (VCC = 3.4 V, ICC = 4.5 mA) • HIGH POWER GAIN: 20 dB (UPC2715T) • WIDE FREQUENCY RESPONSE: 2 GHz (UPC2714T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE • SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE GAIN vs. FREQUENCY UPC2715 UPC2714 0 0.5 1.0 1.5 2.0 20 15 10 5 0 Frequency, f (GHz) PART NUMBER UPC2714T UPC2715T PACKAGE OUTLINE T06 T06 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX ICC Circuit Current mA 3.3 4.5 5.7 3.3 4.5 5.7 GS Small Signal Gain dB 8.5 11.5 15.5 16 19 23 fU Upper Limit Operating Frequency (The gain at fU is 3 dB down from the gain at 0.1 GHz) GHz 1.4 1.8 0.9 1.2 ∆GS Gain Flatness, f = 0.1~ 0.6 GHz dB ±1.0 ±1.0 PSAT Saturated Output Power dBm -10 -7 -9 -6 NF Noise Figure dB 5.0 6.5 4.5 6.0 RLIN Input Return Loss dB 10 13 12 17 RLOUT Output Return Loss dB 5 8 5 8 ISOL Isolation dB 22 27 28 33 ∆GT Gain-Temperature Coefficient dB/ °C +0.006 +0.006 RTH Thermal Resistance (Junction to Ambient) °C/W 200 200 ELECTRICAL CHARACTERISTICS (TA = 25°C, f = 0.5 GHz, VCC = 3.4 V) California Eastern Laboratories |
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