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SI2324DS Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2324DS Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 6 page  ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 100 V VDS=100V, VGS=0V 1 VDS=100V, VGS=0V, TJ=55℃ 10 Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA 1.2 2.8 V VGS=10V, ID=1.5A 195 234 VGS=6V, ID=1A 222 267 VGS=4.5V, ID=0.5A 231 278 On State Drain Current ID(ON) VGS=4.5V, VDS≥5V 5 A Forward Transconductance gFS VDS=20V, ID=1.5A 2 S Input Capacitance Ciss 190 Output Capacitance Coss 22 Reverse Transfer Capacitance Crss 13 Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz 0.3 1.4 2.8 Ω Total Gate Charge Qg 5.2 10.4 Gate Source Charge Qgs 0.75 Gate Drain Charge Qgd 1.4 Turn-On DelayTime td(on) 30 45 Turn-On Rise Time tr 26 39 Turn-Off DelayTime td(off) 17 26 Turn-Off Fall Time tf 12 20 Body Diode Reverse Recovery Time trr IF= 1.3A, dI/dt= 100A/μs 22 33 Body Diode Reverse Recovery Charge Qrr IF= 1.3A, dI/dt= 100A/μs 21 32 nC Maximum Body-Diode Continuous Current IS 2.1 A Diode Forward Voltage VSD IS=1.3A,VGS=0V 0.8 1.2 V pF nC ns Zero Gate Voltage Drain Current IDSS μ A mΩ VGS=4.5V, VDS=50V, RL=39Ω,RGEN=1Ω RDS(On) Static Drain-Source On-Resistance VGS=0V, VDS=50V, f=1MHz VGS=4.5V, VDS=50V, ID=1.6A www .kexin.com.cn 2 SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET ■ Marking Marking D 4* a.Pulse test ; pulse width ≤300 μs,duty cycle≤2% a a a SI2324DS (KI2324DS) |
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