AO6408 datasheet(2/4 Pages) KEXIN

Part #	AO6408

Description	N-Channel MOSFET

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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MOSFET

N-Channel MOSFET

AO6408 (KO6408)

■

Electrical Characteristics Ta = 25℃

* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.

■

Marking

D8**

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=250μA, VGS=0V

20

Gate-Source breakdown voltage

BVGSO

VDS=0 V, IG=±250uA

±12

VDS=16V, VGS=0V

10

VDS=16V, VGS=0V, TJ=55℃

25

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±10V

±

10

uA

Gate Threshold Voltage

VGS(th)

VDS=VGS , ID=250 uA

0.5

1

V

VGS=10V, ID=8.8A

18

VGS=10V, ID=8.8A TJ=125℃

23

VGS=4.5V, ID=8A

20

VGS=2.5V, ID=6A

25

VGS=1.8V, ID=4A

32

On State Drain Current

ID(ON)

VGS=4.5V, VDS=5V

40

A

Forward Transconductance

gFS

VDS=5V, ID=8.8A

33

S

Input Capacitance

Ciss

1810 2200

Output Capacitance

Coss

232

Reverse Transfer Capacitance

Crss

200

Gate Resistance

Rg

VGS=0V, VDS=0V, f=1MHz

1.6

2.2

Ω

Total Gate Charge

Qg

17.9

22

Gate Source Charge

Qgs

1.5

Gate Drain Charge

Qgd

4.7

Turn-On DelayTime

td(on)

3.3

Turn-On Rise Time

tr

5.9

Turn-Off DelayTime

td(off)

44

Turn-Off Fall Time

tf

7.7

Body Diode Reverse Recovery Time

trr

22

27

Body Diode Reverse Recovery Charge

Qrr

9.8

nC

Maximum Body-Diode Continuous Current

IS

3

A

Diode Forward Voltage

VSD

IS=1A,VGS=0V

1

V

VGS=4.5V, VDS=10V, ID=8.8A

pF

nC

ns

VGS=10V, VDS=10V, RL=1.1Ω,RG=3Ω

IF= 8.8A, dI/dt= 100A/us

VGS=0V, VDS=10V, f=1MHz

Zero Gate Voltage Drain Current

IDSS

uA

mΩ

RDS(On)

Static Drain-Source On-Resistance

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