HGTP5N120BN datasheet(2/7 Pages) INTERSIL

Part #	HGTP5N120BN

Description	21A, 1200V, NPT Series N-Channel IGBTs

Download	7 Pages

Scroll/Zoom	100%

Manufacturer	INTERSIL [Intersil Corporation]

Direct Link	http://www.intersil.com/cda/home

Logo

2 / 7 page

2

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

HGTP5N120BN,

HGT1S5N120BNS

UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES

1200

V

Collector Current Continuous

At TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C25

21

A

At TC = 110

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C110

10

A

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM

40

A

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES

±20

V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM

±30

V

Switching Safe Operating Area at TJ = 150

oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA

30A at 1200V

Power Dissipation Total at TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

167

W

Power Dissipation Derating TC > 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.33

W/oC

Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV

36

mJ

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

300

oC

Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

260

oC

Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC

8

µs

Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC

15

µs

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTES:

1. Pulse width limited by maximum junction temperature.

2. ICE = 12A, L = 500µH.

3. VCE(PK) = 840V, TJ = 125

oC, R

G = 25Ω.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Collector to Emitter Breakdown Voltage

BVCES

IC = 250µA, VGE = 0V

1200

-

V

Emitter to Collector Breakdown Voltage

BVECS

IC = 10mA, VGE = 0V

15

-

V

Collector to Emitter Leakage Current

ICES

VCE = BVCES

TC = 25

oC

-

250

µA

TC = 125

oC

-

100

-

µA

TC = 150

oC

-

1.5

mA

Collector to Emitter Saturation Voltage

VCE(SAT)

IC = 5A,

VGE = 15V

TC = 25

oC

-

2.45

2.7

V

TC = 150

oC

-

3.7

4.2

V

Gate to Emitter Threshold Voltage

VGE(TH)

IC = 45µA, VCE = VGE

6.0

6.8

-

V

Gate to Emitter Leakage Current

IGES

VGE = ±20V

-

±250

nA

Switching SOA

SSOA

TJ = 150

oC, R

G = 25Ω, VGE = 15V,

L = 5mH, VCE(PK) = 1200V

30

-

A

Gate to Emitter Plateau Voltage

VGEP

IC = 5A, VCE = 0.5 BVCES

-

10.5

-

V

On-State Gate Charge

QG(ON)

IC = 5A,

VCE = 0.5 BVCES

VGE = 15V

-

53

65

nC

VGE = 20V

-

60

72

nC

HGTP5N120BN, HGT1S5N120BNS

Similar Part No. - HGTP5N120BN

Manufacturer	Part #	Datasheet	Description
Fairchild Semiconductor	HGTP5N120BND	216Kb / 8P	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
Intersil Corporation	HGTP5N120BND	89Kb / 7P	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes January 2000

More results

Similar Description - HGTP5N120BN

Manufacturer	Part #	Datasheet	Description
Fairchild Semiconductor	HGTG5N120BND	216Kb / 8P	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
Intersil Corporation	HGTG5N120BND	89Kb / 7P	21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes January 2000
International Rectifier	EMP25P12B	1Mb / 15P	NPT IGBTs 25A, 1200V
International Rectifier	PIIPM25P12B008	1,002Kb / 28P	NPT IGBTs 25A, 1200V
Intersil Corporation	HGTP2N120CND	92Kb / 7P	13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes January 2000
Intersil Corporation	HGTG15N120C3	139Kb / 11P	35A, 1200V, UFS Series N-Channel IGBTs June 1997
Unisonic Technologies	UG1N120	290Kb / 3P	1200V NPT SERIES N-CHANNEL IGBT
Fairchild Semiconductor	HGTG30N120CN	113Kb / 8P	75A, 1200V, NPT Series N-Channel IGBT
Intersil Corporation	HGTD2N120CNS	89Kb / 7P	13A, 1200V, NPT Series N-Channel IGBT January 2000
Intersil Corporation	HGTG10N120BN	81Kb / 7P	35A, 1200V, NPT Series N-Channel IGBT January 2000

More results

HGTP5N120BN Datasheet(PDF) 2 Page - Intersil Corporation

HGTP5N120BN Datasheet(HTML) 2 Page - Intersil Corporation

Similar Part No. - HGTP5N120BN

Similar Description - HGTP5N120BN

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL