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HGT1S3N60B3DS Datasheet(PDF) 3 Page - Intersil Corporation |
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HGT1S3N60B3DS Datasheet(HTML) 3 Page - Intersil Corporation |
3 / 7 page 3 Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150 oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 82Ω L = 1mH Test Circuit (Figure 19) -16 - ns Current Rise Time trI -18 - ns Current Turn-Off Delay Time td(OFF)I - 220 295 ns Current Fall Time tfI - 115 175 ns Turn-On Energy EON - 130 140 µJ Turn-Off Energy (Note 1) EOFF - 210 325 µJ Diode Forward Voltage VEC IEC = 3A - 2.0 2.5 V Diode Reverse Recovery Time trr IEC = 1A, dIEC/dt = 200A/µs- - 22 ns IEC = 3A, dIEC/dt = 200A/µs- - 28 ns Thermal Resistance Junction To Case RθJC IGBT - - 3.75 oC/W Diode 3.0 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. Typical Performance Curves Unless Otherwise Specified FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA Electrical Specifications TC = 25 oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS TC, CASE TEMPERATURE ( oC) 25 50 75 100 125 150 1 0 3 5 2 4 6 7 VGE = 15V VCE, COLLECTOR TO EMITTER VOLTAGE (V) 10 700 6 0 2 4 300 400 200 100 500 600 8 0 12 14 16 18 20 TJ = 150 oC, R G = 82Ω, VGE = 15V L = 500µH HGTP3N60B3D, HGT1S3N60B3DS |
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