SUN04A65F datasheet(1/8 Pages) KODENSHI

Part #	SUN04A65F

Description	New Generation N-Ch Power MOSFET

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Manufacturer	KODENSHI [KODENSHI_AUK CORP.]

Direct Link	http://www.kodenshi.co.kr

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1 / 8 page

Rev. date: 09-JUL-14

KSD-T0O157-000

www.auk.co.kr

1 of 8

SUN04A65F

New Generation N-Ch Power MOSFET

HIGH SPEED SWITCHING APPLICATION

Features

 Low drain-source On resistance: RDS(on)=2.4Ω (Typ.)

 Low gate charge: Qg=12nC (Typ.)

 Low reverse transfer capacitance: Crss=6pF (Typ.)

 Lower EMI noise

 RoHS compliant device

 100% avalanche tested

Ordering Information

Part Number

Marking

Package

SUN04A65F

SUN04A65

TO-220F-3L

Marking Information

Absolute maximum ratings (T

C=25C unless otherwise noted)

Characteristic

Symbol

Rating

Unit

Drain-source voltage

VDSS

650

V

Gate-source voltage

VGSS

30

V

Drain current (DC) *

ID

Tc=25C

4

A

Tc=100C

2.53

A

Drain current (Pulsed) *

IDM

16

A

Single avalanche energy (Note 2)

EAS

86.7

mJ

Repetitive avalanche current (Note 1)

IAR

4

A

Repetitive avalanche energy (Note 1)

EAR

3.2

mJ

Power dissipation

PD

32

W

Junction temperature

TJ

150

C

Storage temperature range

Tstg

-55~150

C

* Limited only maximum junction temperature

AUK

ΔYMDD

SDB20D45

AUK

ΔYMDD

SDB20D45

TO-220F-3L

G D S

AUK

◎△YMDD□

SUN04A65

Column 1: Manufacturer

Column 2: Production Information

e.g.) ◎

△YMDD□

-. ◎: Option Code

-.

△: Factory Management Code

-. YMDD: Date Code (Year, Month, Daily)

-. □: Package Option Code

Column 3: Device Code

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