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HGTP10N50E1D Datasheet(PDF) 4 Page - Intersil Corporation

Part # HGTP10N50E1D
Description  10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

HGTP10N50E1D Datasheet(HTML) 4 Page - Intersil Corporation

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3-23
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
FIGURE 8. TYPICAL VCE(ON) vs TEMPERATURE
FIGURE 9. TYPICAL TURN-OFF DELAY TIME
FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
FIGURE 11. TYPICAL FALL TIME (IC = 5A)
FIGURE 12. TYPICAL FALL TIME (IC = 10A)
Typical Performance Curves (Continued)
1000
800
600
400
200
0
010
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 0.1MHz
CISS
COSS
CRSS
1200
3.00
2.75
2.50
2.25
2.00
1.75
1.50
+25
+50
+75
+100
+125
+150
TJ, JUNCTION TEMPERATURE (
oC)
IC = 5A, VGE = 15V
IC = 5A, VGE = 10V
IC = 10A, VGE = 15V
IC = 10A, VGE = 10V
400
300
200
100
0
+25
+50
+75
+100
+125
+150
TJ, JUNCTION TEMPERATURE (
oC)
IC = 20A, VGE = 10V, VCL = 300V
L =25
µH, R
G = 25Ω
VGE
VCE
IC
WOFF = ∫ IC * VCEdt
800
700
600
500
400
300
200
100
0
+25
+50
+75
+100
+125
+150
TJ, JUNCTION TEMPERATURE (
oC)
IC = 5A, VGE = 10V, VCL = 300V
L = 50
µH, R
G = 50Ω
40C1/50C1
40E1/50E1
800
700
600
500
400
300
200
100
0
+25
+50
+75
+100
+125
+150
TJ, JUNCTION TEMPERATURE (
oC)
IC = 10A, VGE = 10V, VCL = 300V
L = 50
µH, R
G = 50Ω
40C1/50C1
40E1/50E1


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