HGTP5N120CND datasheet(2/7 Pages) INTERSIL

Part #	HGTP5N120CND

Description	25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

HGTG5N120CND

HGTP5N120CND

HGT1S5N120CNDS

UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES

1200

V

Collector Current Continuous

At TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C25

25

A

At TC = 110

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C110

12

A

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM

40

A

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES

±20

V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM

±30

V

Switching Safe Operating Area at TJ = 150

oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA

30A at 1200V

Power Dissipation Total at TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

167

W

Power Dissipation Derating TC > 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.33

W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

300

oC

Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

260

oC

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC

8

µs

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC

15

µs

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTES:

1. Pulse width limited by maximum junction temperature.

2. VCE(PK) = 840V, TJ = 125

oC, R

G = 25Ω.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Collector to Emitter Breakdown Voltage

BVCES

IC = 250µA, VGE = 0V

1200

-

V

Collector to Emitter Leakage Current

ICES

VCE = BVCES

TC = 25

oC

-

250

µA

TC = 125

oC

-

100

-

µA

TC = 150

oC-

-

2

mA

Collector to Emitter Saturation Voltage

VCE(SAT)

IC = 5.5A,

VGE = 15V

TC = 25

oC

-

2.1

2.4

V

TC = 150

oC

-

2.9

3.5

V

Gate to Emitter Threshold Voltage

VGE(TH)

IC = 45µA, VCE = VGE

6.0

7.0

-

V

Gate to Emitter Leakage Current

IGES

VGE = ±20V

-

±250

nA

Switching SOA

SSOA

TJ = 150

oC, R

G = 25Ω, VGE = 15V,

L = 200

µH, VCE(PK) = 1200V

25

-

A

Gate to Emitter Plateau Voltage

VGEP

IC = 5.5A, VCE = 0.5 BVCES

-

10.6

-

V

On-State Gate Charge

QG(ON)

IC = 5.5A,

VCE = 0.5 BVCES

VGE = 15V

-

45

55

nC

VGE = 20V

-

60

75

nC

Current Turn-On Delay Time

td(ON)I

IGBT and Diode at TJ = 25

oC

ICE = 5.5A

VCE = 0.8 BVCES

VGE = 15V

RG = 25Ω

L = 5mH

Test Circuit (Figure 20)

-22

30

ns

Current Rise Time

trI

-12

16

ns

Current Turn-Off Delay Time

td(OFF)I

-

180

250

ns

Current Fall Time

tfI

-

280

350

ns

Turn-On Energy

EON

-

400

500

µJ

Turn-Off Energy (Note 3)

EOFF

-

640

700

µJ

HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS

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