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HGTP20N60A4 Datasheet(PDF) 2 Page - Intersil Corporation

Part # HGTP20N60A4
Description  600V, SMPS Series N-Channel IGBTs
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

HGTP20N60A4 Datasheet(HTML) 2 Page - Intersil Corporation

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Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HGTG20N60A4, HGTP20N60A4
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
600
V
Collector Current Continuous
At TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
70
A
At TC = 110
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
40
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
280
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
±30
V
Switching Safe Operating Area at TJ = 150
oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
100A at 600V
Power Dissipation Total at TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
290
W
Power Dissipation Derating TC > 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.32
W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
TJ = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = 10mA, VGE = 0V
15
-
-
V
Collector to Emitter Leakage Current
ICES
VCE = 600V
TJ = 25
oC
-
-
250
µA
TJ = 125
oC
-
-
2.0
mA
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 20A,
VGE = 15V
TJ = 25
oC
-
1.8
2.7
V
TJ = 125
oC
-
1.6
2.0
V
Gate to Emitter Threshold Voltage
VGE(TH)
IC = 250µA, VCE = 600V
4.5
5.5
7.0
V
Gate to Emitter Leakage Current
IGES
VGE = ±20V
-
-
±250
nA
Switching SOA
SSOA
TJ = 150
oC, R
G = 3Ω, VGE = 15V
L = 100
µH, VCE = 600V
100
-
-
A
Gate to Emitter Plateau Voltage
VGEP
IC = 20A, VCE = 300V
-
8.6
-
V
On-State Gate Charge
Qg(ON)
IC = 20A,
VCE = 300V
VGE = 15V
-
142
162
nC
VGE = 20V
-
182
210
nC
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 25
oC
ICE = 20A
VCE = 390V
VGE =15V
RG = 3Ω
L = 500
µH
Test Circuit (Figure 20)
-15
-
ns
Current Rise Time
trI
-12
-
ns
Current Turn-Off Delay Time
td(OFF)I
-73
-
ns
Current Fall Time
tfI
-32
-
ns
Turn-On Energy (Note 3)
EON1
-
105
-
µJ
Turn-On Energy (Note 3)
EON2
-
280
350
µJ
Turn-Off Energy (Note 2)
EOFF
-
150
200
µJ
HGTG20N60A4, HGTP20N60A4


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