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HGTP7N60C3 Datasheet(PDF) 2 Page - Intersil Corporation

Part # HGTP7N60C3
Description  14A, 600V, UFS Series N-Channel IGBTs
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

HGTP7N60C3 Datasheet(HTML) 2 Page - Intersil Corporation

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Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HGTD7N60C3S HGTP7N60C3
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
600
V
Collector Current Continuous
At TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
14
A
At TC = 110
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
7A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
56
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
±30
V
Switching Safe Operating Area at TJ = 150
oC, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
40A at 480V
Power Dissipation Total at TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
60
W
Power Dissipation Derating TC > 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.48
W/oC
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
100
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-40 to 150
oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
260
oC
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
1
µs
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
8
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125
oC, R
G = 50Ω.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = 3mA, VGE = 0V
16
30
-
V
Collector to Emitter Leakage Current
ICES
VCE = BVCES
TC = 25
oC
-
-
250
µA
VCE = BVCES
TC = 150
oC
-
-
2.0
mA
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = IC110,
VGE = 15V
TC = 25
oC
-
1.6
2.0
V
TC = 150
oC
-
1.9
2.4
V
Gate to Emitter Threshold Voltage
VGE(TH)
IC = 250µA,
VCE = VGE
TC = 25
oC
3.0
5.0
6.0
V
Gate to Emitter Leakage Current
IGES
VGE = ±25V
-
-
±250
nA
Switching SOA
SSOA
TJ = 150
oC
RG = 50Ω
VGE = 15V
L = 1mH
VCE(PK) = 480V
40
-
-
A
VCE(PK) = 600V
6
-
-
A
Gate to Emitter Plateau Voltage
VGEP
IC = IC110, VCE = 0.5 BVCES
-8-
V
On-State Gate Charge
QG(ON)
IC = IC110,
VCE = 0.5 BVCES
VGE = 15V
-
23
30
nC
VGE = 20V
-
30
38
nC
HGTD7N60C3S, HGTP7N60C3


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