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HGTP7N60C3 Datasheet(PDF) 2 Page - Intersil Corporation |
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HGTP7N60C3 Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 7 page 2 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTD7N60C3S HGTP7N60C3 UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V Collector Current Continuous At TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C25 14 A At TC = 110 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C110 7A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 56 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150 oC, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 40A at 480V Power Dissipation Total at TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D 60 W Power Dissipation Derating TC > 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 W/oC Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to 150 oC Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260 oC Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 1 µs Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 8 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125 oC, R G = 50Ω. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Emitter to Collector Breakdown Voltage BVECS IC = 3mA, VGE = 0V 16 30 - V Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25 oC - - 250 µA VCE = BVCES TC = 150 oC - - 2.0 mA Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V TC = 25 oC - 1.6 2.0 V TC = 150 oC - 1.9 2.4 V Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA, VCE = VGE TC = 25 oC 3.0 5.0 6.0 V Gate to Emitter Leakage Current IGES VGE = ±25V - - ±250 nA Switching SOA SSOA TJ = 150 oC RG = 50Ω VGE = 15V L = 1mH VCE(PK) = 480V 40 - - A VCE(PK) = 600V 6 - - A Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES -8- V On-State Gate Charge QG(ON) IC = IC110, VCE = 0.5 BVCES VGE = 15V - 23 30 nC VGE = 20V - 30 38 nC HGTD7N60C3S, HGTP7N60C3 |
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