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HGTP3N60B3 Datasheet(PDF) 3 Page - Intersil Corporation

Part # HGTP3N60B3
Description  7A, 600V, UFS Series N-Channel IGBTs
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

HGTP3N60B3 Datasheet(HTML) 3 Page - Intersil Corporation

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3
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 150
oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 82Ω
L = 1mH
Test Circuit (Figure 17)
-16
-
ns
Current Rise Time
trI
-18
-
ns
Current Turn-Off Delay Time
td(OFF)I
-
220
295
ns
Current Fall Time
tfI
-
115
175
ns
Turn-On Energy
EON
-
130
140
µJ
Turn-Off Energy (Note 3)
EOFF
-
210
325
µJ
Thermal Resistance Junction To Case
RθJC
-
-
3.75
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
TC, CASE TEMPERATURE (
oC)
25
50
75
100
125
150
1
0
3
5
2
4
6
7
VGE = 15V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
10
700
6
0
2
4
300
400
200
100
500
600
8
0
12
14
16
18
20
TJ = 150
oC, R
G = 82Ω, VGE = 15V, L = 500µH
1
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
246
1
100
8
fMAX1 = 0.05/(td(OFF)I + td(ON)I)
RØJC = 3.75
oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC)/(EON + EOFF)
TJ = 150
oC, R
G = 82Ω, L = 1mH, VCE = 480V
357
200
TC
VGE
110oC
10V
15V
15V
75oC
110oC
75oC
10V
VGE, GATE TO EMITTER VOLTAGE (V)
10
11
12
13
14
15
4
6
8
10
14
16
12
15
20
25
30
35
40
45
tSC
ISC
VCE = 360V, RG = 82Ω, TJ = 125
oC
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3


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