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HGTP3N60B3 Datasheet(PDF) 3 Page - Intersil Corporation |
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HGTP3N60B3 Datasheet(HTML) 3 Page - Intersil Corporation |
3 / 7 page 3 Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150 oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 82Ω L = 1mH Test Circuit (Figure 17) -16 - ns Current Rise Time trI -18 - ns Current Turn-Off Delay Time td(OFF)I - 220 295 ns Current Fall Time tfI - 115 175 ns Turn-On Energy EON - 130 140 µJ Turn-Off Energy (Note 3) EOFF - 210 325 µJ Thermal Resistance Junction To Case RθJC - - 3.75 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. Typical Performance Curves Unless Otherwise Specified FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME Electrical Specifications TC = 25 oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS TC, CASE TEMPERATURE ( oC) 25 50 75 100 125 150 1 0 3 5 2 4 6 7 VGE = 15V VCE, COLLECTOR TO EMITTER VOLTAGE (V) 10 700 6 0 2 4 300 400 200 100 500 600 8 0 12 14 16 18 20 TJ = 150 oC, R G = 82Ω, VGE = 15V, L = 500µH 1 ICE, COLLECTOR TO EMITTER CURRENT (A) 10 246 1 100 8 fMAX1 = 0.05/(td(OFF)I + td(ON)I) RØJC = 3.75 oC/W, SEE NOTES PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) fMAX2 = (PD - PC)/(EON + EOFF) TJ = 150 oC, R G = 82Ω, L = 1mH, VCE = 480V 357 200 TC VGE 110oC 10V 15V 15V 75oC 110oC 75oC 10V VGE, GATE TO EMITTER VOLTAGE (V) 10 11 12 13 14 15 4 6 8 10 14 16 12 15 20 25 30 35 40 45 tSC ISC VCE = 360V, RG = 82Ω, TJ = 125 oC HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 |
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