Silicon Photo Transistor

1. Structure

1.1 Chip Size : 0.60mm X 0.45mm

1.2 Chip thickness : 220±30um

1.3 Metallization : Top - Al, Bottom - Au

1.4 Passivation : Silicon Nitride

1.5 Bonding Pad Size

- Emitter : 130um

- Base : 60um X 60um

2. Electro-Optical Characteristics

(Ta=25℃)

Symbol

Min

Typ

Max

Unit

Condition

500

nA

880

nm

λ

nm

*Parallel light of 1,000lux illumination is applied by a tungsten lamp of 2856K.

3. Guaranteed Probed Electrical Characteristics

(Ta=25℃)

Symbol

Min

Typ

Max

Unit

60

V

90

V

6.5

V

5V

50

nA

300

mV

tr/tf

us

400

1,600

-

4. Maximum Ratings

(Ta=25℃)

Symbol

Rating

Unit

30

V

5V

150

℃

Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea

Tel.

+82 63 839 1111

Fax.

+82 63 835 8259

www.auk.co.kr

Emitter-Collector Voltage

Collector-Emitter Voltage

OPB0604

Condition

15/15(Typ)

Parameter

C-E Voltage

E-C Voltage

C-E Leakage Current

DC Current Gain

RL-1000Ω

500~1,050

Spectrum Sensitivity

AUK Corp.

Peak Sensing Wavelength

C-E Leakage Current

Parameter

Rise/Fall Time

C-E Saturation Voltage

E-B Voltage

C-B Voltage

Parameter

Junction Temperature

: Emitter Electrode

: Base Electrode