Silicon Photo Transistor

1. Structure

1.1 Chip Size : 0.50mm X 0.50mm

1.2 Chip thickness : 180±20um

1.3 Metallization : Top - Al, Bottom - Cr-Au

1.4 Passivation : Silicon Nitride

1.5 Bonding Pad Size

- Emitter : 120 X 120um

- Base : 60um X 60um

2. Electrical Characteristics

(Ta=25℃)

Symbol

Min

Typ

Max

Unit

30

V

30

V

5V

5V

100

nA

300

mV

200

-

3. Maximum Ratings

(Ta=25℃)

Symbol

Rating

Unit

30

V

30

V

5V

Ic

100

mA

150

℃

-55 to+150

℃

Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea

Tel. +82 63 839 1111

Fax. +82 63 835 8259

www.auk.co.kr

AUK Corp.

Collector Current

C-E Saturation Voltage

E-B Breakdown Voltage

C-B Breakdown Voltage

Parameter

Collector-Base Voltage

OPB0505P

Condition

Parameter

C-E Breakdown Voltage

E-C Breakdown Voltage

Collector Cut-Off Current

Storage Temperature

DC Current Gain

Collector-Emitter Voltage

Emitter-Base Voltage

Junction Temperature