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OPB0505P Datasheet(PDF) 1 Page - KODENSHI_AUK CORP. |
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OPB0505P Datasheet(HTML) 1 Page - KODENSHI_AUK CORP. |
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1 / 1 page Silicon Photo Transistor 1. Structure 1.1 Chip Size : 0.50mm X 0.50mm 1.2 Chip thickness : 180±20um 1.3 Metallization : Top - Al, Bottom - Cr-Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 120 X 120um - Base : 60um X 60um 2. Electrical Characteristics (Ta=25℃) Symbol Min Typ Max Unit BVCEO 30 V BVCBO 30 V BVEBO 5V BVECO 5V ICEO 100 nA VCES 300 mV hFE 200 - 3. Maximum Ratings (Ta=25℃) Symbol Rating Unit VCBO 30 V VCEO 30 V VEBO 5V Ic 100 mA TJ 150 ℃ Tstg -55 to+150 ℃ Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr ICE=10uA AUK Corp. Collector Current C-E Saturation Voltage E-B Breakdown Voltage C-B Breakdown Voltage Parameter IC=2mA, IB=100uA VCE=20V IEC=10uA ICB=10uA Collector-Base Voltage OPB0505P ICE=100uA Condition Parameter C-E Breakdown Voltage E-C Breakdown Voltage Collector Cut-Off Current VCE=5V, Ic=2mA Storage Temperature DC Current Gain Collector-Emitter Voltage Emitter-Base Voltage Junction Temperature |
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