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HCTS646HMSR Datasheet(PDF) 1 Page - Intersil Corporation |
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HCTS646HMSR Datasheet(HTML) 1 Page - Intersil Corporation |
1 / 11 page 706 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 Ordering Information PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE HCTS646DMSR -55oC to +125oC Intersil Class S Equivalent 24 Lead SBDIP HCTS646KMSR -55oC to +125oC Intersil Class S Equivalent 24 Lead Ceramic Flatpack HCTS646D/Sample +25oC Sample 24 Lead SBDIP HCTS646K/Sample +25oC Sample 24 Lead Ceramic Flatpack HCTS646HMSR +25oC Die Die HCTS646MS Radiation Hardened Octal Bus Transceiver/Register, Three-State Pinouts 24 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T24 TOP VIEW 24 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F24 TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 CAB SAB DIR A0 A1 A2 A3 A4 A5 A6 A7 GND 16 17 18 19 20 21 22 23 24 15 14 13 VCC SBA OE B0 B1 B3 B5 B6 B7 CBA B2 B4 24 23 22 21 20 19 18 17 16 15 14 13 2 3 4 5 6 7 8 9 10 11 12 1 CAB SAB DIR A0 A1 A2 A3 A4 A5 A6 A7 GND VCC SBA OE B0 B1 B3 B5 B6 B7 CBA B2 B4 Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Cosmic Ray Upset Rate 2 x 10-9 Errors/Bit Day • Latch-Up Free Under Any Conditions • Fanout (Over Temperature Range) - Bus Driver Outputs - 15 LSTTL Loads • Military Temperature Range: -55oC to +125oC • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.5V to 5.5V • LSTTL Input Compatibility - VIL = 0.8V Max - VIH = VCC/2 • Input Current Levels Ii ≤ 5µA at VOL, VOH Description The Intersil HCTS646MS is a Radiation Hardened Three- State Octal Bus Tranceiver/Register with Non-Inverting outputs. This device is a bus transceiver with D-type flip-flops which act as internal storage registers. Data on the A bus or the B bus can be clocked into the registers on a High-to-Low transition of either CAB ro CBA clock inputs. Output enable (OE) and Direction (DIR) inputs control the transceiver func- tions. Data present at the high impedance output can be stored in either register or both but only one of the two buses can be enabled as outputs at any one time. The select con- trols (SAB and SBA) can multiplex stored and transparent (real time) data. The direction control determines which data bus will receive data when the OE pin is LOW. In the high impedance mode (OE high), A data can be stored in one reg- ister and B data in the other register. Data at the A or B termi- nals can be clocked into the storage flip-flops at any time. The HCTS646MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCTS646MS is supplied in a 24 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix). August 1995 Spec Number 518628 File Number 3074.1 |
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