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Die Characteristics

DIE DIMENSIONS:

(3149

µm x 2794µm x 533µm ±51µm)

124 x 110 x 21mils

±2mil

METALLIZATION:

Type: Al Si

Thickness: 11.0k

Å

SUBSTRATE POTENTIAL:

Unbiased Silicon on Sapphire

BACKSIDE FINISH:

Sapphire

PASSIVATION:

Thickness: 13k

Å

WORST CASE CURRENT DENSITY:

TRANSISTOR COUNT:

274

PROCESS:

CMOS SOS

Metallization Mask Layout

HCTS245T

(18) B0

(17) B1

(16) B2

(15) B3

(14) B4

(13) B5

A0 (2)

A1 (3)

A2 (4)

A3 (5)

A4 (6)

A5 (7)

NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask

series for the HCTS245 is TA14417A.

HCTS245T