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STD70NS04ZL Datasheet(PDF) 3 Page - STMicroelectronics

Part # STD70NS04ZL
Description  N-channel clamped 9.5 m, 70 A DPAK fully protected SAFeFET Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD70NS04ZL Datasheet(HTML) 3 Page - STMicroelectronics

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STD70NS04ZL
Electrical ratings
Doc ID 16344 Rev 1
3/13
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
33 (1)
1.
Voltage is limited by zener diodes
V
VDG
drain-gate voltage
33 (1)
V
VGS
Gate-source voltage
±20 (1)
V
ID
Drain current (continuous) at TC = 25 °C
70
A
ID
Drain current (continuous) at TC=100 °C
50
A
IDG
Drain gate current (continuous)
± 50
mA
IGS
Gate-source current (continuous)
± 50
mA
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
280
A
PTOT
Total dissipation at TC = 25 °C
110
W
Derating factor
0.73
W/°C
VESD(G-S)
Gate-source ESD (HBM-C=100 pF, R=1.5 k
Ω)± 8
kV
VESD(G-D)
Gate-drain ESD (HBM-C=100 pF, R=1.5 k
Ω)± 8
kV
VESD(D-S)
Drain-source ESD (HBM-C=100 pF, R=1.5 k
Ω)± 8
kV
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 175
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
1.36
°C/W
Rthj-pcb
(1)
1.
When mounted on 1 inch² 2 oz. FR4 Cu.
Thermal resistance junction-pcb max
50
°C/W
Table 4.
Avalanche data
Symbol
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
30
A
EAS
Single pulse avalanche energy (starting
Tj=25 °C, ID=IAS, VDD=21 V)
(see Figure 17, Figure 18)
650
mJ


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