2SD1619-R datasheet(1/3 Pages) KEXIN

Part #	2SD1619-R

Description	NPN Transistors

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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1

Transistors

NPN Transistors

2SD1619

■

Features

●

Very small size making it easy to provide highdensity,

small-sized hybrid IC’s.

●

Complementary to 2SB1119

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

25

Collector - Emitter Voltage

VCEO

25

Emitter - Base Voltage

VEBO

5

Collector Current - Continuous

IC

1

Collector Current - Pulse

ICP

2

Collector Power Dissipation

0.5

(Note.1)

1.3

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

A

PC

W

Note.1:Mounted on ceramic board (250mm ×0.8mm)

2

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 uA， IE= 0

25

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA，RBE= ∞

25

Emitter - base breakdown voltage

VEBO

IE= 100 uA， IC= 0

5

Collector-base cut-off current

ICBO

VCB= 20 V , IE= 0

0.1

Emitter cut-off current

IEBO

VEB= 4V , IC=0

0.1

Collector-emitter saturation voltage

VCE(sat) IC=500 mA, IB=50 mA

0.1

0.3

Base - emitter saturation voltage

VBE(sat) IC=500 mA, IB=50 mA

0.85

1.2

VCE= 2V, IC= 50 mA

100

560

VCE= 2V, IC= 1 A

40

Collector output capacitance

Cob

VCB= 10V, IE= 0,f=1MHz

15

pF

Transition frequency

fT

VCE= 10V, IC= 50mA

180

MHz

V

uA

DC current gain

hFE

V

■

Classification of hfe(1)

Type

2SD1619-R

2SD1619-S

2SD1619-T

2SD1619-U

Range

100-200

140-280

200-400

280-560

Marking

DB R*

DB S*

DB T*

DB U*

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2SD1619-R Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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