2SD1618-S datasheet(1/3 Pages) KEXIN

Part #	2SD1618-S

Description	NPN Transistors

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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Transistors

NPN Transistors

2SD1618

■

Features

●

Low collector-to-emitter saturation voltage.

●

Very small size making it easy to provide highdensity,

small-sized hybrid IC’s.

●

Complementary to 2SB1118

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

20

Collector - Emitter Voltage

VCEO

15

Emitter - Base Voltage

VEBO

5

Collector Current - Continuous

IC

0.7

Collector Current - Pulse

ICP

1.5

Collector Power Dissipation

0.5

(Note.1)

1.3

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

A

PC

W

Note.1:Mounted on ceramic board (250mm ×0.8mm)

2

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= 100 uA， IE= 0

20

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA，RBE= ∞

15

Emitter - base breakdown voltage

VEBO

IE= 100 uA， IC= 0

5

Collector-base cut-off current

ICBO

VCB= 15 V , IE= 0

0.1

Emitter cut-off current

IEBO

VEB= 4V , IC=0

0.1

IC=5 mA, IB=0.5 mA

10

25

IC=100 mA, IB=10 mA

30

80

Base - emitter saturation voltage

VBE(sat) IC=100 mA, IB=10 mA

0.8

1.2

V

VCE= 2V, IC= 50 mA

140

560

VCE= 2V, IC= 500 mA

60

Collector output capacitance

Cob

VCB= 10V, IE= 0,f=1MHz

8

pF

Transition frequency

fT

VCE= 10V, IC= 50mA

250

MHz

V

uA

DC current gain

hFE

Collector-emitter saturation voltage

VCE(sat)

mV

■

Classification of hfe(1)

Type

2SD1618-S

2SD1618-T

2SD1618-U

Range

140-280

200-400

280-560

Marking

DA S*

DA T*

DA U*

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