2

FSYC055D, FSYC055R

UNITS

60

V

60

V

Continuous Drain Current

D

70 (Note)

A

D

56

A

200

A

±20

V

Maximum Power Dissipation

T

162

W

T

65

W

1.30

Single Pulsed Avalanche Current, L = 100

200

A

70

A

200

A

-55 to 150

(Distance >0.063in (1.6mm) from Case, 10s Max)

300

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE: Current limited by package capability.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

60

-

-

V

Gate Threshold Voltage

-

-

5.0

V

1.5

-

4.0

V

0.5

-

-

V

Zero Gate Voltage Drain Current

-

25

µA

-

-

250

µA

Gate to Source Leakage Current

-

-

100

nA

-

-

200

nA

Drain to Source On-State Voltage

-

-

0.882

V

Drain to Source On Resistance

-

0.008

0.012

Ω

-

-

0.019

Ω

Turn-On Delay Time

-

-

50

ns

Rise Time

-

-

65

ns

Turn-Off Delay Time

-

-

80

ns

Fall Time

-

-

40

ns

Total Gate Charge

-

-

290

nC

Gate Charge at 12V

-

150

170

nC

Threshold Gate Charge

-

-

15

nC

Gate Charge Source

-40

55

nC

Gate Charge Drain

-53

75

nC

Plateau Voltage

-

7

-

V

Input Capacitance

f = 1MHz

-

4750

-

pF

Output Capacitance

-

2200

-

pF

Reverse Transfer Capacitance

-

475

-

pF

Thermal Resistance Junction to Case

R

-

-

0.77

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Forward Voltage

0.6

-

1.8

V

Reverse Recovery Time

-

-

300

ns

FSYC055D, FSYC055R