3-125

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

June 1998

Features

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

• Dose Rate

• Photo Current

- 12nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications

Formerly available as type TA17657.

Description

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs specif-

ically designed for commercial and military space applica-

tions. Enhanced Power MOSFET immunity to Single Event

Effects (SEE), Single Event Gate Rupture (SEGR) in particu-

lar, is combined with 100K RADS of total dose hardness to

provide devices which are ideally suited to harsh space envi-

ronments. The dose rate and neutron tolerance necessary

for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

field-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be oper-

ated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent

of

MIL-S-19500,

or

Space

equivalent

of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Symbol

Package

SMD1

Ordering Information

RAD LEVEL

SCREENING LEVEL

PART NUMBER/BRAND

10K

Commercial

FSYA250D1

10K

TXV

FSYA250D3

100K

Commercial

FSYA250R1

100K

TXV

FSYA250R3

100K

Space

FSYA250R4

D

G

S

File Number

4313.1

FSYA250D,

FSYA250R

27A, 200V, 0.100 Ohm, Rad Hard,

SEGR Resistant, N-Channel Power MOSFETs