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FSS913A0R1 Datasheet(PDF) 4 Page - Intersil Corporation

Part # FSS913A0R1
Description  10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSS913A0R1 Datasheet(HTML) 4 Page - Intersil Corporation

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4-4
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
Typical Performance Curves Unless Otherwise Specified (Continued)
TC, CASE TEMPERATURE (
oC)
150
100
50
0
-50
0
2
4
10
8
6
12
10
1
0.1
-10
-100
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
100
µs
10ms
100ms
1ms
-300
VDS, DRAIN TO SOURCE VOLTAGE (V)
-1
TC = 25
oC
100
CHARGE
QGD
QG
VG
QGS
-12V
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (
oC)
PULSE DURATION = 250ms, VGS = -12V, ID = 6A
t, RECTANGULAR PULSE DURATION (s)
10-5
10-4
10-3
10-2
10-1
100
101
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
10-3
10-2
10-1
100
101
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
FSS913A0D, FSS913A0R


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