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FSS9230D1 Datasheet(PDF) 2 Page - Intersil Corporation |
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FSS9230D1 Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 8 page 3-204 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSS9230D, FSS9230R UNITS Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS -200 V Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -200 V Continuous Drain Current TC = 25 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 4A TC = 100 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D 3A Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 12 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V Maximum Power Dissipation TC = 25 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P T 50 W TC = 100 oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P T 20 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.40 W/oC Single Pulsed Avalanche Current, L = 100 µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS 12 A Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS 4A Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 12 A Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) 300 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V -200 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA TC = -55 oC - - -7.0 V TC = 25 oC -2.0 - -6.0 V TC = 125 oC -1.0 - - V Zero Gate Voltage Drain Current IDSS VDS = -160V, VGS = 0V TC = 25 oC- - 25 µA TC = 125 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V TC = 25 oC - - 100 nA TC = 125 oC - - 200 nA Drain to Source On-State Voltage VDS(ON) VGS = -12V, ID = 4A - - -6.72 V Drain to Source On Resistance rDS(ON)12 ID = 3A, VGS = -12V TC = 25 oC - - 1.60 Ω TC = 125 oC - - 2.90 Ω Turn-On Delay Time td(ON) VDD = -100V, ID = 4A, RL = 25Ω, VGS = -12V, RGS = 7.5Ω - - 55 ns Rise Time tr - - 110 ns Turn-Off Delay Time td(OFF) - - 130 ns Fall Time tf - - 120 ns Total Gate Charge Qg(TOT) VGS = 0V to -20V VDD = -100V, ID = 4A - - 58 nC Gate Charge at 12V Qg(12) VGS = 0V to -12V - 30 37 nC Threshold Gate Charge Qg(TH) VGS = 0V to -2V - - 2.5 nC Gate Charge Source Qgs - 5.6 7.6 nC Gate Charge Drain Qgd -11 15 nC Plateau Voltage V(PLATEAU) ID = 4A, VDS = -15V - -6 - V Input Capacitance CISS VDS = -25V, VGS = 0V, f = 1MHz - 840 - pF Output Capacitance COSS - 180 - pF Reverse Transfer Capacitance CRSS -35- pF Thermal Resistance Junction to Case R θJC - - 2.5 oC/W Thermal Resistance Junction to Ambient R θJA -- 60 oC/W FSS9230D, FSS9230R |
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