Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

FSS234R3 Datasheet(PDF) 3 Page - Intersil Corporation

Part # FSS234R3
Description  6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSS234R3 Datasheet(HTML) 3 Page - Intersil Corporation

  FSS234R3 Datasheet HTML 1Page - Intersil Corporation FSS234R3 Datasheet HTML 2Page - Intersil Corporation FSS234R3 Datasheet HTML 3Page - Intersil Corporation FSS234R3 Datasheet HTML 4Page - Intersil Corporation FSS234R3 Datasheet HTML 5Page - Intersil Corporation FSS234R3 Datasheet HTML 6Page - Intersil Corporation FSS234R3 Datasheet HTML 7Page - Intersil Corporation FSS234R3 Datasheet HTML 8Page - Intersil Corporation  
Zoom Inzoom in Zoom Outzoom out
 3 / 8 page
background image
3-85
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
VSD
ISD = 6A
0.6
-
1.8
V
Reverse Recovery Time
trr
ISD = 6A,dISD/dt = 100A/µs
-
-
420
ns
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Drain to Source Breakdown Volts
(Note 3)
BVDSS
VGS = 0, ID = 1mA
250
-
V
Gate to Source Threshold Volts
(Note 3)
VGS(TH)
VGS = VDS, ID = 1mA
1.5
4.0
V
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
100
nA
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 200V
-
25
µA
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON)
VGS = 12V, ID = 6A
-
3.78
V
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12
VGS = 12V, ID = 4A
-
0.600
NOTES:
1. Pulse test, 300
µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
Single Event Effects (SEB, SEGR) (Note 4)
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
APPLIED
VGS BIAS
(V)
(NOTE 6)
MAXIMUM
VDS BIAS
(V)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (
µ)
Single Event Effects Safe Operating
Area
SEESOA
Ni
26
43
-20
250
Br
37
36
-5
250
Br
37
36
-10
200
Br
37
36
-15
125
Br
37
36
-20
50
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
0
0
-10
-15
-20
-25
-5
LET = 37MeV/mg/cm2, RANGE = 36
µ
300
200
100
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
TEMP = 25oC
LET = 26MeV/mg/cm2, RANGE = 43
µ
VGS (V)
300
100
10
DRAIN SUPPLY (V)
1000
ILM = 10A
300A
1E-4
1E-5
1E-6
30
100A
30A
1E-7
1E-3
FSS234D, FSS234R


Similar Part No. - FSS234R3

ManufacturerPart #DatasheetDescription
logo
Sanyo Semicon Device
FSS234 SANYO-FSS234 Datasheet
29Kb / 4P
   DC / DC Converter Applications
More results

Similar Description - FSS234R3

ManufacturerPart #DatasheetDescription
logo
Intersil Corporation
FSJ264D INTERSIL-FSJ264D Datasheet
48Kb / 9P
   33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
June 1998
FSL234D INTERSIL-FSL234D Datasheet
46Kb / 8P
   4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
June 1998
FSS23A4D INTERSIL-FSS23A4D Datasheet
46Kb / 8P
   7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
June 1998
FSF254D INTERSIL-FSF254D Datasheet
45Kb / 8P
   18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
June 1998
FSL23A4D INTERSIL-FSL23A4D Datasheet
46Kb / 8P
   5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
June 1998
FSS9130D INTERSIL-FSS9130D Datasheet
44Kb / 8P
   6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
June 1998
FSL110D INTERSIL-FSL110D Datasheet
58Kb / 8P
   3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
October 1998
FSF450D INTERSIL-FSF450D Datasheet
45Kb / 8P
   9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
June 1998
FSL230D INTERSIL-FSL230D Datasheet
45Kb / 8P
   5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
June 1998
FSL430D INTERSIL-FSL430D Datasheet
46Kb / 8P
   2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
June 1998
More results


Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com