1

TM

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Star*Power™ is a trademark of Intersil Corporation.

1-888-INTERSIL or 321-724-7143

FSPYE230R, FSPYE230F

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFETs

Intersil Star*Power Rad Hard

MOSFETs have been specifically

developed for high performance

applications in a commercial or

military space environment. Star*Power MOSFETs offer the

Charge allowing the development of low loss Power

Subsystems. Star*Power FETs combine this electrical

capability with total dose radiation hardness up to 300K

RADs while maintaining the guaranteed performance for

SEE (Single Event Effects) which the Intersil FS families

have always featured.

The Intersil portfolio of Star*Power FETS includes a family of

devices in various voltage, current and package styles. The

Star*Power family consists of Star*Power and Star*Power

Gold products. Star*Power FETS are optimized for total dose

full rated voltage up to an LET of 37. Star*Power Gold FETS

have been optimized for SEE and Gate Charge providing

SEE performance to 80% of the rated voltage for an LET of

82 with extremely low gate charge characteristics.

This MOSFET is an enhancement-mode silicon-gate power

field effect transistor of the vertical DMOS (VDMOS)

structure. It is specifically designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, power

distribution, motor drives and relay drivers as well as other

power control and conditioning applications. As with

conventional MOSFETs these Radiation Hardened

MOSFETs offer ease of voltage control, fast switching

speeds and ability to parallel switching devices.

Reliability screening is available as either, TXV or Space

equivalent of MIL-S-19500.

Formerly available as type TA45210W.

Features

• UIS Rated

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

- Rated to 300K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

• Dose Rate

• Photo Current

- 3.0nA Per-RAD (Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications

Symbol

Packaging

SMD.5

Ordering Information

RAD LEVEL

SCREENING LEVEL

PART NUMBER/BRAND

10K

Engineering samples

FSPYE230D1

100K

TXV

FSPYE230R3

100K

Space

FSPYE230R4

300K

TXV

FSPYE230F3

300K

Space

FSPYE230F4

D

G

S

Data Sheet

May 2000

File Number

4852.1