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FSPYE230R4 Datasheet(PDF) 2 Page - Intersil Corporation |
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FSPYE230R4 Datasheet(HTML) 2 Page - Intersil Corporation |
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2 / 8 page  2 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSPYE230R, FSPYE230F UNITS Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 200 V Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 200 V Continuous Drain Current TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I D 12 A TC = 100 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I D 8A Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 40 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±30 V Maximum Power Dissipation TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P T 42 W TC = 100 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P T 17 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.33 W/oC Single Pulsed Avalanche Current, L = 100 µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .IAS 36 A Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS 12 A Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 40 A Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) 300 oC Weight (Typical) 1.0 (Typ) g CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V 200 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA TC = -55 oC - - 5.5 V TC = 25 oC 2.0 - 4.5 V TC = 125 oC 1.0 - - V Zero Gate Voltage Drain Current IDSS VDS = 160V, VGS = 0V TC = 25 oC- - 25 µA TC = 125 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±30V TC = 25 oC - - 100 nA TC = 125 oC - - 200 nA Drain to Source On-State Voltage VDS(ON) VGS = 12V, ID = 12A - - 1.74 V Drain to Source On Resistance rDS(ON)12 ID = 8A, VGS = 12V TC = 25 oC - 0.120 0.140 Ω TC = 125 oC - - 0.266 Ω Turn-On Delay Time td(ON) VDD = 100V, ID = 12A, RL = 8.3Ω, VGS = 12V, RGS = 7.5Ω - - 20 ns Rise Time tr - - 25 ns Turn-Off Delay Time td(OFF) - - 30 ns Fall Time tf - - 15 ns Total Gate Charge Qg(12) VGS = 0V to 12V VDD = 100V, ID = 12A -30 33 nC Gate Charge Source Qgs -10 12 nC Gate Charge Drain Qgd - 8 10 nC Gate Charge at 20V Qg(20) VGS = 0V to 20V - 45 - nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - 3 - nC Plateau Voltage V(PLATEAU) ID = 12A, VDS = 15V - 6.5 - V Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz - 1400 - pF Output Capacitance COSS - 230 - pF Reverse Transfer Capacitance CRSS -8- pF Thermal Resistance Junction to Case R θJC - - 3.0 oC/W FSPYE230R, FSPYE230F |
Similar Part No. - FSPYE230R4 |
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Similar Description - FSPYE230R4 |
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