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2SB1386 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # 2SB1386
Description  PNP Transistors
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SB1386 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
Transistors
1
www.kexin.com.cn
2SB1386
Absolute Maximum Ratings Ta = 25
ti
n
U
g
n
it
a
R
l
o
b
m
y
S
r
e
t
e
m
a
r
a
P
V
e
g
a
tl
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v
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s
a
b
-r
o
t
c
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ll
o
C
CBO
-30
V
V
e
g
a
tl
o
v
r
e
tt
i
m
e
-r
o
t
c
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ll
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C
CEO
-20
V
V
e
g
a
tl
o
v
e
s
a
b
-r
e
tt
i
m
E
EBO
-6
V
I
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c
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C
C
-5
A
I
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P
(t
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C
CP
*
-10
A
P
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it
a
p
i
s
s
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C
C
0.5
W
0
5
1
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S
stg
-55 to +150
* Single pulse, Pw=10ms
Electrical Characteristics Ta = 25
Parameter
Symbol
Test onditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO IC
V
0
3
-
A
0
5
-
=
Collector-emitter breakdown voltage
BVCEO IC
V
0
2
-
A
m
1
-
=
Emitter-base breakdown voltage
BVEBO IE
V
6
-
A
0
5
-
=
I
t
n
e
rr
u
c
ff
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u
c
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C
CBO
VCB
A
5
.
0
-
V
0
2
-
=
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t
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c
ff
o
t
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c
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tt
i
m
E
EBO
VEB
A
5
.
0
-
V
5
-
=
DC current transfer ratio
VCE(sat) IC=-4A,IB
V
1
-
A
1
.
0
-
=
Collector-emitter saturation voltage
hFE
VCE=-2V, IC
0
9
3
2
8
A
5
.
0
-
=
C
Output capacitance
ob
VCE=-6V, IE=50mA, f=30MHz
120
MHz
f
Transition frequency
T
VCB=-20V, IE
F
p
0
6
z
H
M
1
=
f
,
A
0
=
hFE Classification
Features
Low VCE(sat).
VCE(sat) = -0.35V (Typ.)
(IC/IB = -4A / -0.1A)
Excellent DC current gain
Epitaxial planar type
PNP silicon transistor
PNP Transistors
C
u
u
u
u
0.35
1.Base
2.Collector
3.Emitter
1.70 0.1
0.42 0.1
0.46 0.1
Type
2SB1386-P
2SB1386-Q
2SB1386-R
Range
82-180
120-270
180-390
Marking
BHP*
BHQ*
BHR*


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