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2SB1386 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SB1386 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type Transistors 1 www.kexin.com.cn 2SB1386 Absolute Maximum Ratings Ta = 25 ti n U g n it a R l o b m y S r e t e m a r a P V e g a tl o v e s a b -r o t c e ll o C CBO -30 V V e g a tl o v r e tt i m e -r o t c e ll o C CEO -20 V V e g a tl o v e s a b -r e tt i m E EBO -6 V I t n e rr u c r o t c e ll o C C -5 A I ) e s l u P (t n e rr u c r o t c e ll o C CP * -10 A P n o it a p i s s i d r e w o p r o t c e ll o C C 0.5 W 0 5 1 j T e r u t a r e p m e t n o it c n u J T e r u t a r e p m e t e g a r o t S stg -55 to +150 * Single pulse, Pw=10ms Electrical Characteristics Ta = 25 Parameter Symbol Test onditions Min Typ Max Unit Collector-base breakdown voltage BVCBO IC V 0 3 - A 0 5 - = Collector-emitter breakdown voltage BVCEO IC V 0 2 - A m 1 - = Emitter-base breakdown voltage BVEBO IE V 6 - A 0 5 - = I t n e rr u c ff o t u c r o t c e ll o C CBO VCB A 5 . 0 - V 0 2 - = I t n e rr u c ff o t u c r e tt i m E EBO VEB A 5 . 0 - V 5 - = DC current transfer ratio VCE(sat) IC=-4A,IB V 1 - A 1 . 0 - = Collector-emitter saturation voltage hFE VCE=-2V, IC 0 9 3 2 8 A 5 . 0 - = C Output capacitance ob VCE=-6V, IE=50mA, f=30MHz 120 MHz f Transition frequency T VCB=-20V, IE F p 0 6 z H M 1 = f , A 0 = hFE Classification Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor PNP Transistors C u u u u 0.35 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 Type 2SB1386-P 2SB1386-Q 2SB1386-R Range 82-180 120-270 180-390 Marking BHP* BHQ* BHR* |
Similar Part No. - 2SB1386_15 |
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Similar Description - 2SB1386_15 |
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