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FRL430D Datasheet(PDF) 2 Page - Intersil Corporation

Part # FRL430D
Description  2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FRL430D Datasheet(HTML) 2 Page - Intersil Corporation

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4-2
Pre-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
500
-
V
Gate-Threshold Volts
VGS(th)
VDS = VGS, ID = 1mA
2.0
4.0
V
Gate-Body Leakage Forward
IGSSF
VGS = +20V
-
100
nA
Gate-Body Leakage Reverse
IGSSR
VGS = -20V
-
100
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = 500V, VGS = 0
VDS = 400V, VGS = 0
VDS = 400V, VGS = 0, TC = +125oC
-
-
-
1
0.025
0.25
mA
Rated Avalanche Current
IAR
Time = 20
µs-
6
A
Drain-Source On-State Volts
VDS(on)
VGS = 10V, ID = 2A
-
5.25
V
Drain-Source On Resistance
RDS(on)
VGS = 10V, ID = 1A
-
2.50
Ω
Turn-On Delay Time
td(on)
VDD = 250V, ID = 2A
-
46
ns
Rise Time
tr
Pulse Width = 3
µs-
58
Turn-Off Delay Time
td(off)
Period = 300
µs, Rg = 25Ω
-
208
Fall Time
tf
0
≤ VGS ≤ 10 (See Test Circuit)
-
54
Gate-Charge Threshold
QG(th)
VDD = 250V, ID = 2A
IGS1 = IGS2
0
≤ VGS ≤ 20
14
nc
Gate-Charge On State
QG(on)
15
64
Gate-Charge Total
QGM
32
130
Plateau Voltage
VGP
3
14
V
Gate-Charge Source
QGS
3
12
nc
Gate-Charge Drain
QGD
8
32
Diode Forward Voltage
VSD
ID = 2A, VGD = 0
0.6
1.8
V
Reverse Recovery Time
TT
I = 2A; di/dt = 100A/
µs
-
1000
ns
Junction-To-Case
R
θjc
-
5.0
oC/W
Junction-To-Ambient
R
θja
Free Air Operation
-
175
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
VDS
DUT
RGS
0V
VGS = 12V
VDD
RL
tP
VGS ≤ 20V
L
+
-
VDS
VDD
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
50
Ω
50
Ω
50V-150V
IAS
+
-
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
CURRENT
TRANSFORMER
FRL430D, FRL430R, FRL430H


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