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FRK9150D Datasheet(PDF) 2 Page - Intersil Corporation

Part No. FRK9150D
Description  26A, -100V, 0.125 Ohm, Rad Hard, P-Channel Power MOSFETs
Download  6 Pages
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Maker  INTERSIL [Intersil Corporation]
Homepage  http://www.intersil.com/cda/home
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FRK9150D Datasheet(HTML) 2 Page - Intersil Corporation

   
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4-2
Pre-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
-100
-
V
Gate-Threshold Volts
VGS(th)
VDS = VGS, ID = 1mA
-2.0
-4.0
V
Gate-body Leakage Forward
IGSSF
VGS = -20V
-
100
nA
Gate-Body Leakage Reverse
IGSSR
VGS = +20V
-
100
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = -100V, VGS = 0
VDS = -80V, VGS = 0
VDS = -80V, VGS = 0, TC = +125oC
-
-
-
1
0.025
0.25
mA
Rated Avalanche Current
IAR
Time = 20
µs
-
78
A
Drain-Source On-State Volts
VDS(on)
VGS = -10V, ID = 26A
-
-3.41
V
Drain-source On Resistance
RDS(on)
VGS = -10V, ID = 17A
-
.125
Turn-On Delay Time
td(on)
VDD = -50V, ID = 26A
-
164
ns
Rise Time
tr
Pulse Width = 3
µs
-
672
Turn-Off Delay Time
td(off)
Period = 300
µs, Rg = 25Ω
-
326
Fall Time
tf
0
≤ VGS ≤ 10 (See Test Circuit)
-
240
Gate-Charge Threshold
QG(th)
VDD = -50V, IDD = 26A
IGS1 = IGS2
0
≤ VGS ≤ 20
315
nc
Gate-Charge On State
QG(on)
58
234
Gate-Charge Total
QGM
129
518
Plateau Voltage
VGP
-3
-14
V
Gate-Charge Source
QGS
16
66
nc
Gate-Charge Drain
QGD
21
86
Diode Forward Voltage
VSD
ID = 26A, VGD = 0
-0.6
-1.8
V
Reverse Recovery Time
TT
I = 26A; di/dt = 100A/
µs
-
500
ns
Junction-To-Case
R
θjc
-
.83
oC/W
Junction-To-Ambient
R
θja
Free Air Operation
-
30
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
VDD
RL
VDS
DUT
RGS
0V
VGS = -12V
tP
VGS ≤ 20V
L
+
-
VDS
VDD
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
50
50
50V-150V
IAS
+
-
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
CURRENT
TRANSFORMER
FRK9150D, FRK9150R, FRK9150H


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