4-1

FRF254D, FRF254R,

FRF254H

17A, 250V, 0.185 Ohm, Rad Hard,

N-Channel Power MOSFETs

File Number

3232.1

Package

TO-254AA

Symbol

CAUTION: Beryllia Warning per MIL-S-19500

refer to package specifications.

Features

• 17A, 250V, RDS(on) = 0.185

Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma

- Meets Pre-Rad Specifications to 100KRAD(Si)

- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

- Performance Permits Limited Use to 3000KRAD(Si)

• Gamma Dot

- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

- Survives 2E12 Typically If Current Limited to IDM

• Photo Current

- 15.0nA Per-RAD(Si)/sec Typically

• Neutron

Description

The Intersil has designed a series of SECOND GENERATION hardened power

MOSFETs of both N and P channel enhancement types with ratings from 100V to

500V, 1A to 60A, and on resistance as low as 25m

Ω. Total dose hardness is

offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from

(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with cur-

rent limiting.

This MOSFET is an enhancement-mode silicon-gate power field effect transistor of

the vertical DMOS (VDMOS) structure. It is specially designed and processed to

exposures. Design and processing efforts are also directed to enhance survival to

heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above.

Reliability screening is available as either non TX (commercial), TX equivalent of

MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of

MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired

deviations from the data sheet.

FRF254D, R, H

UNITS

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

250

V

Drain-Gate Voltage (RGS = 20k

Ω). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

250

V

Continuous Drain Current

17

11

A

A

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

51

A

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

V

Maximum Power Dissipation

125

50

1.00

W

W

Inductive Current, Clamped, L = 100

µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM

51

A

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS

17

A

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

51

A

Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG

-55 to +150

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

300

June 1998

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207