ISL705AEH datasheet(9/19 Pages) INTERSIL

Part #	ISL705AEH

Description	Rad-Hard, 5.0V/3.3V u-Processor Supervisory Circuits

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Manufacturer	INTERSIL [Intersil Corporation]

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ISL705AEH, ISL705BEH, ISL705CEH, ISL706AEH, ISL706BEH, ISL706CEH

9

FN8262.0

March 30, 2012

Post Radiation Characteristics Unless otherwise specified, VDD = 4.75V to 5.5V for the ISL705AEH/BEH/CEH, VDD = 3.15V to 3.6V

for the ISL706AEH/BEH/CEH TA = +25°C. This data is parameter deltas post radiation exposure at a rate of 50 to 300rad(Si)/s. This data is intended to

show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed.

SYMBOL

PARAMETER

CONDITIONS

0 - 25kRad

0 - 50kRad

0 - 75kRad 0 - 100kRad

UNITS

POWER SUPPLY SECTION

IDD

Operating Supply Current

ISL705AEH/BEH/CEH

-2

-2.44

-3.86

-4.88

µA

ISL706AEH/BEH/CEH

-4.79

-7.47

-6.93

-8.88

µA

RESET SECTION

VRST

Reset Threshold Voltage

ISL705AEH/BEH/CEH

-8.1

-13.1

-17.5

-18.1

mV

ISL706AEH/BEH/CEH

-1

-3.25

-5.38

-7.25

mV

VHYS

Reset Threshold Voltage

Hysteresis

ISL705AEH/BEH/CEH

-3.75

-1.9

-5

-3.12

mV

ISL706AEH/BEH/CEH

0.375

0.25

0.625

mV

tRST

Reset Pulse Width

-2.13

-2.18

-2.39

-2.35

ms

WATCHDOG SECTION

tWD

Watchdog Time-Out Period

-56

-72

-81

-80

ms

MANUAL RESET SECTION

tMD

Manual Reset (MR) to Reset

Out Delay

ISL705AEH/BEH/CEH

0.028

0.146

0.274

0.368

ns

ISL706AEH/BEH/CEH

0.305

0.605

0.793

0.956

ns

THRESHOLD DETECTOR SECTION

VPFI

Power Fail Input (PFI) Input

Threshold Voltage

ISL705AEH/BEH/CEH

0.94

0.31

0

-0.62

mV

ISL706AEH/BEH/CEH

-1.56

-2.5

mV

tRPFI

PFI Rising Threshold

Crossing to PFO Delay

ISL705AEH/BEH/CEH

-0.026

-0.047

-0.085

-0.068

µs

ISL706AEH/BEH/CEH

0.028

-0.058

0.11

-0.11

µs

tFPFI

PFI Falling Threshold

Crossing to PFO Delay

ISL705AEH/BEH/CEH

-0.397

-0.77

-1.17

-2.88

µs

ISL706AEH/BEH/CEH

-0.35

-0.782

-1.516

-2.087

µs

Post Radiation Characteristics Unless otherwise specified, VDD = 4.75V to 5.5V for the ISL705AEH/BEH/CEH, VDD = 3.15V to 3.6V

for the ISL706AEH/BEH/CEH TA = +25°C. This data is typical mean test data post radiation exposure at a rate of <10mrad(Si)/s. This data is intended

to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed

FIGURE 14. ISL705xEH IDD vs LOW DOSE RATE RADIATION

FIGURE 15. ISL705xEH VRST vs LOW DOSE RATE RADIATION

krad(Si)

450

460

470

480

490

500

510

520

530

540

0

255075

100

125

150

BIASED

GROUNDED

krad(Si)

4.45

4.50

4.55

4.60

4.65

4.70

4.75

4.80

0

25

50

75

100

125

150

BIASED

GROUNDED

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