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CD4508BMS Datasheet(PDF) 4 Page - Intersil Corporation |
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CD4508BMS Datasheet(HTML) 4 Page - Intersil Corporation |
4 / 9 page ![]() 1151 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Specifications CD4508BMS Propagation Delay Data In to Data Out TPHL2 TPLH2 VDD = 5V 1, 2, 3 +25oC - 210 ns VDD = 10V 1, 2, 3 +25oC - 120 ns VDD = 15V 1, 2, 3 +25oC - 90 ns Propagation Delay Reset to Data Out TPHL3 TPLH3 VDD = 5V 1, 2, 3 +25oC - 180 ns VDD = 10V 1, 2, 3 +25oC - 100 ns VDD = 15V 1, 2, 3 +25oC - 80 ns Propagation Delay 3-State TPHZ TPZH VDD = 5V 1, 2, 4 +25oC - 180 ns VDD = 10V 1, 2, 4 +25oC - 100 ns VDD = 15V 1, 2, 4 +25oC - 70 ns Transition Time 3-State TPLZ TPZL VDD = 5V 1, 2, 4 +25oC - 180 ns VDD = 10V 1, 2, 4 +25oC - 100 ns VDD = 15V 1, 2, 4 +25oC - 70 ns Transition Time TTHL TTLH VDD = 10V 1, 2, 3 +25oC - 100 ns VDD = 15V 1, 2, 3 +25oC - 80 ns Minimum Strobe Pulse Width TWS VDD = 5V 1, 2, 3 +25oC - 140 ns VDD = 10V 1, 2, 3 +25oC - 80 ns VDD = 15V 1, 2, 3 +25oC - 70 ns Minimum Data Setup Time TS VDD = 5V 1, 2, 3 +25oC - 50 ns VDD = 10V 1, 2, 3 +25oC - 30 ns VDD = 15V 1, 2, 3 +25oC - 20 ns Minimum Data Hold Time TH VDD = 5V 1, 2, 3 +25oC- 0 ns VDD = 10V 1, 2, 3 +25oC- 0 ns VDD = 15V 1, 2, 3 +25oC- 0 ns Minimum Reset Pulse Width TWR VDD = 5V 1, 2, 3 +25oC - 200 ns VDD = 10V 1, 2, 3 +25oC - 140 ns VDD = 15V 1, 2, 3 +25oC - 100 ns Input Capacitance CIN Any Input 1, 2 +25oC - 7.5 pF NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. CL = 50pF, RL = 1K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE LIMITS UNITS MIN MAX Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC- 25 µA N Threshold Voltage VNTH VDD = 10V, ISS = -10 µA 1, 4 +25oC -2.8 -0.2 V TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE LIMITS UNITS MIN MAX |
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