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CD4508BMS Datasheet(PDF) 4 Page - Intersil Corporation

Part # CD4508BMS
Description  CMOS Dual 4-Bit Latch
Download  9 Pages
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

CD4508BMS Datasheet(HTML) 4 Page - Intersil Corporation

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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Specifications CD4508BMS
Propagation Delay
Data In to Data Out
TPHL2
TPLH2
VDD = 5V
1, 2, 3
+25oC
-
210
ns
VDD = 10V
1, 2, 3
+25oC
-
120
ns
VDD = 15V
1, 2, 3
+25oC
-
90
ns
Propagation Delay
Reset to Data Out
TPHL3
TPLH3
VDD = 5V
1, 2, 3
+25oC
-
180
ns
VDD = 10V
1, 2, 3
+25oC
-
100
ns
VDD = 15V
1, 2, 3
+25oC
-
80
ns
Propagation Delay
3-State
TPHZ
TPZH
VDD = 5V
1, 2, 4
+25oC
-
180
ns
VDD = 10V
1, 2, 4
+25oC
-
100
ns
VDD = 15V
1, 2, 4
+25oC
-
70
ns
Transition Time
3-State
TPLZ
TPZL
VDD = 5V
1, 2, 4
+25oC
-
180
ns
VDD = 10V
1, 2, 4
+25oC
-
100
ns
VDD = 15V
1, 2, 4
+25oC
-
70
ns
Transition Time
TTHL
TTLH
VDD = 10V
1, 2, 3
+25oC
-
100
ns
VDD = 15V
1, 2, 3
+25oC
-
80
ns
Minimum Strobe Pulse
Width
TWS
VDD = 5V
1, 2, 3
+25oC
-
140
ns
VDD = 10V
1, 2, 3
+25oC
-
80
ns
VDD = 15V
1, 2, 3
+25oC
-
70
ns
Minimum Data Setup
Time
TS
VDD = 5V
1, 2, 3
+25oC
-
50
ns
VDD = 10V
1, 2, 3
+25oC
-
30
ns
VDD = 15V
1, 2, 3
+25oC
-
20
ns
Minimum Data Hold Time
TH
VDD = 5V
1, 2, 3
+25oC-
0
ns
VDD = 10V
1, 2, 3
+25oC-
0
ns
VDD = 15V
1, 2, 3
+25oC-
0
ns
Minimum Reset Pulse
Width
TWR
VDD = 5V
1, 2, 3
+25oC
-
200
ns
VDD = 10V
1, 2, 3
+25oC
-
140
ns
VDD = 15V
1, 2, 3
+25oC
-
100
ns
Input Capacitance
CIN
Any Input
1, 2
+25oC
-
7.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. CL = 50pF, RL = 1K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Supply Current
IDD
VDD = 20V, VIN = VDD or GND
1, 4
+25oC-
25
µA
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10
µA
1, 4
+25oC
-2.8
-0.2
V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX


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