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UPA828TF Datasheet(PDF) 2 Page - NEC

Part No. UPA828TF
Description  HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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UPA828TF Datasheet(HTML) 2 Page - NEC

 
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PPPPPA828TF
2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
ICBO
VCB = 5 V, IE = 0
0.1
PA
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0
0.1
PA
DC Current Gain
hFE
VCE = 2 V, IC = 20 mA
Note 1
70
140
Gain Bandwidth Product (1)
fT
VCE = 2 V, IC = 20 mA, f = 2 GHz
9
11
GHz
Gain Bandwidth Product (2)
fT
VCE = 1 V, IC = 10 mA, f = 2 GHz
7
9
GHz
Feedback Capacitance
Cre
VCB = 2 V, IE = 0, f = 1 MHz
Note 2
0.4
0.8
pF
Insertion Power Gain (1)
|S21e|
2
VCE = 2 V, IC = 20 mA, f = 2 GHz
7
8.5
dB
Insertion Power Gain (2)
|S21e|
2
VCE = 1 V, IC = 10 mA, f = 2 GHz
6
7.5
dB
Noise Figure (1)
NF
VCE = 2 V, IC = 3 mA, f = 2 GHz
1.3
2
dB
Noise Figure (2)
NF
VCE = 1 V, IC = 3 mA, f = 2 GHz
1.3
2
dB
hFE Ratio
hFE1/hFE2
VCE = 2 V, IC = 20 mA
hFE1 = smaller hFE value among Q1 and Q2
hFE2 = larger hFE value among Q1 and Q2
0.85
Notes 1. Pulse measurement PW
d 350
Ps, Duty cycle d 2%
2. Capacitance between collector and base measured with a capacitance meter (auto-balancing bridge
method). Emitter should be connected to the guard pin of capacitance meter.
hFE CLASSIFICATION
Rank
KB
Marking
R86
hFE value
70 to 140


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