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UPA828TF Datasheet(PDF) 1 Page - NEC

Part No. UPA828TF
Description  HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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UPA828TF Datasheet(HTML) 1 Page - NEC

 
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The information in this document is subject to change without notice.
SILICON TRANSISTOR
PPPPPA828TF
HIGH-FREQUENCY LOW-NOISE AMPLIFIER
NPN SILICON EPITAXIAL TWIN TRANSISTOR
(WITH BUILT-IN 6-PIN 2
uuuu 2SC5184) THIN-TYPE SMALL MINI MOLD
1997
©
Document No. P12693EJ1V0DS00 (1st edition)
Date Published July 1997 N
Printed in Japan
PRELIMINARY DATA SHEET
PIN CONFIGURATION (Top View)
FEATURES
Low noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
6-pin thin-type small mini mold package adopted
Built-in 2 transistors (2
u 2SC5184)
ORDERING INFORMATION
Part Number
Quantity
Packing Style
PPA828TF
Loose products
(50 pcs)
PPA828TF-T1
Taping products
(3 kpcs/reel)
Remark If you require an evaluation sample, please contact
an NEC Sales Representative (Unit sample quantity
is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (TA = 25
qqqqC)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
5V
Collector to Emitter Voltage
VCEO
3V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
30
mA
Total Power Dissipation
PT
90 in 1 element
180 in 2 elements
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
ð65 to +150
°C
Caution is required concerning excess input, such as from static electricity, due to the high-precision
fabrication processes used for this device.
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2
Emitter), Pin 4 (Q2 Base) face to
perforation side of the tape.
PACKAGE DRAWINGS (Unit: mm)
B1
Q1
Q2
6
5
4
3
2
1
E2
B2
C1
E1
C2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter
(Q1)
3. Collector (Q2)
4. Base
(Q2)
5. Emitter (Q2)
6. Base
(Q1)
2.10±0.1
1.25±0.1


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