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CD4067BMS Datasheet(PDF) 10 Page - Intersil Corporation |
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CD4067BMS Datasheet(HTML) 10 Page - Intersil Corporation |
10 / 10 page 10 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com CD4067BMS, CD4097BMS Chip Dimensions and Pad Layouts CD4067BMSH CD4097BMSH Dimensions in parentheses are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch) Special Considerations In applications where separate power sources are used to drive VDD and the signal inputs, the VDD current capability should exceed VDD/RL (RL = effective external load). This provision avoids permanent current flow or clamp action on the VDD supply when power is applied or removed from the CD4067BMS or CD4097BMS. When switching from one address to another, some of the ON periods of the channels of the multiplexers will overlap momentarily, which may be objectionable in certain applica- tions. Also when a channel is turned on or off by an address input, there is a momentary conductive path from the chan- nel to VSS, which will dump some charge from any capacitor connected to the input or output of the channel. The inhibit input turning on a channel will similarly dump some charge to VSS. The amount of charge dumped is mostly a function of the signal level above VSS. Typically, at VDD - VSS = 10V, a 100pF capacitor connected to the input or output of the channel will lose 3 to 4% of its voltage at the moment the channel turns on or off. This loss of voltage is essentially independent of the address or inhibit signal transition time, if the transition time is less than 1 - 2 µs. When the inhibit sig- nal turns a channel off, there is no charge dumping to VSS. Rather, there is a slight rise in the channel voltage level (65mV typ.) due to capacitive coupling from inhibit input to channel input or output. Address inputs also couple some voltage steps onto the channel signal levels. In certain applications, the external load resistor current may include both VDD and signal-line components. To avoid drawing VDD current when switch current flows into the transmission gate inputs, the voltage drop across the bidi- rectional switch must not exceed 0.8 volt (calculated from RON values shown in ELECTRICAL CHARACTERISTICS CHART - Table 1). no VDD current will flow through RL if the switch current flows into terminal 1 on the CD4067BMS, ter- minals 1 and 17 on the CD4097BMS. METALLIZATION: Thickness: 11k Å − 14kÅ, AL. PASSIVATION: 10.4kÅ - 15.6k Å, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches |
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