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2SA1365 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1365 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page  SMD Type IC www.kexin.com.cn 1 SMD Type Transistors Features Low collector to emitter saturation voltage. Excellent linearity nof DC forward current gain. Super mini package for easy mounting. High collector current. High gain band width product. Absolute Maximum Ratings Ta = 25 Electrical Characteristics Ta = 25 * It shows hFE classification in right table. Marking AE AF AG hFE 150 300 250 500 400 800 PNP Transistors 2SA1365 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1.Base 2.Emitter 3.collector 1 2 3 Unit: mm SOT-23 0.1 +0.05 -0.01 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -25 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -20 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -4 Collector-base cut-off current ICBO VCB= -25 V , IE=0 -100 Emitter cut-off current IEBO VEB= -2V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=- 25mA -0.2 -0.5 Base - emitter saturation voltage VBE(sat) IC=-500mA, IB=- 25mA -1.2 DC current gain * hFE VCE= -4V, IC= -100mA 150 800 Transition frequency fT VCE= -6V, IE= 10mA 180 MHz V nA V ■ Classification of hfe ● Complementary to 2SC3440 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 Emitter - Base Voltage VEBO -4 Collector Current - Continuous IC -700 mA Peak Collector Current ICM -1 A Collector Power Dissipation PC 150 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ℃ 100 |
Similar Part No. - 2SA1365_15 |
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Similar Description - 2SA1365_15 |
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