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UPA814TC Datasheet(PDF) 2 Page - NEC |
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UPA814TC Datasheet(HTML) 2 Page - NEC |
2 / 20 page µPA814TC 2 Data Sheet P14551EJ1V0DS00 ELECTRICAL CHARACTERISTICS (TA = +25 °C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector Cutoff Current ICBO VCB = 5 V, IE = 0 – – 0.1 µA Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 – – 0.1 µA DC Current Gain hFE VCE = 1 V, IC = 3 mANote 1 80 – 160 Gain Bandwidth Product (1) fT VCE = 1 V, IC = 3 mA, f = 2 GHz 4.0 4.5 – GHz Gain Bandwidth Product (2) fT VCE = 3 V, IC = 20 mA, f = 2 GHz – 9.0 – GHz Feedback Capacitance Cre VCB = 1 V, IE = 0, f = 1 MHzNote 2 – 0.75 0.85 pF Insertion Power Gain (1) |S21e|2 VCE = 1 V, IC = 3 mA, f = 2 GHz 2.5 3.5 – dB Insertion Power Gain (2) |S21e|2 VCE = 3 V, IC = 20 mA, f = 2 GHz – 6.5 – dB Noise Figure (1) NF VCE = 1 V, IC = 3 mA, f = 2 GHz – 1.7 2.5 dB Noise Figure (2) NF VCE = 3 V, IC = 7 mA, f = 2 GHz – 1.5 – dB Notes 1. Pulse Measurement: PW ≤ 350 µs, Duty Cycle ≤ 2 % 2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. hFE CLASSIFICATION Rank KB Marking 87 hFE Value 80 to 160 |
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