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UPA812T Datasheet(PDF) 2 Page - NEC

Part No. UPA812T
Description  HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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UPA812T Datasheet(HTML) 2 Page - NEC

   
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µPA812T
2
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
ICBO
VCB = 10 V, IE = 0
0.8
µA
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0
0.8
µA
DC Current Gain
hFE
VCE = 3 V, IC = 7 mANote 1
70
240
Gain Bandwidth Product
fT
VCE = 3 V, IC = 7 mA, f = 1 GHz
4.5
7.0
GHz
Feed-back Capacitance
Cre
VCB = 3 V, IE = 0, f = 1 MHzNote 2
0.9
pF
Insertion Power Gain
|S21e|
2
VCE = 3 V, IC = 7 mA, f = 1 GHz
10
12
dB
Noise Figure
NF
VCE = 3 V, IC = 7 mA, f = 1 GHz
1.4
2.7
dB
hFE Ratio
hFE1/hFE2
VCE = 3 V, IC = 7 mA
0.85
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
Notes 1. Pulse Measurement: Pw
≤ 350
µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
FB
GB
Marking
34R
35R
hFE Value
70 to 150
110 to 240
TYPICAL CHARACTERISTICS (TA = 25
°C)
5
0
10
0.5
0.5
1.0
10
15
20
0
0.5
1.0
10
20
1
5
10
50
20
50
100
200
VCE = 3 V
VCE = 3 V
25
PT - TA Characteristics
100
0
50
100
150
200
Ambient Temperature TA (°C)
Free Air
2 Elements
in
Total
Per
Element
Base to Emitter Voltage VBE (V)
IC - VBE Characteristics
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
hFE - IC Characteristics
IC - VCE Characteristics
160
A
µ
140
A
µ
120 A
µ
100 A
µ
80 A
µ
60 A
µ
40 A
µ
IB = 20 A
µ


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