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UPA811T Datasheet(PDF) 2 Page - NEC

Part No. UPA811T
Description  HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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UPA811T Datasheet(HTML) 2 Page - NEC

   
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µPA811T
2
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
ICBO
VCB = 10 V, IE = 0
1.0
µA
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0
1.0
µA
DC Current Gain
hFE
VCE = 3 V, IC = 5 mANote 1
80
200
Gain Bandwidth Product
fT
VCE = 3 V, IC = 5 mA
5.5
8.0
GHz
Feed-back Capacitance
Cre
VCB = 3 V, IE = 0, f = 1 MHzNote 2
0.7
pF
Insertion Power Gain
|S21e|2
VCE = 3 V, IC = 5 mA, f = 2 GHz
5.5
7.5
dB
Noise Figure
NF
VCE = 3 V, IC = 5 mA, f = 2 GHz
1.9
3.2
dB
hFE Ratio
hFE1/hFE2
VCE = 3 V, IC = 5 mA
0.85
A smaller value among hFE of hFE1 = Q1, Q2
A Larger value among hFE of hFE2 = Q1, Q2
Notes 1. Pulse Measurement: Pw
≤ 350
µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
FB
GB
Marking
44R
45R
hFE Value
80 to 160
125 to 250
TYPICAL CHARACTERISTICS (TA = 25
°C)
100
0
5
0
10
0.5
50
100
150
200
5
1.0
10
15
20
0
0.5
1.0
10
20
1
5
10
50
20
50
100
200
VCE = 3 V
VCE = 3 V
120 A
100 A
80 A
IB = 20 A
Ambient Temperature TA (°C)
Collector to Emitter Voltage VCE (V)
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
60 A
40 A
25
Free Air
IC - VBE Characteristics
h FE - IC Characteristics
PT - TA Characteristics
IC - VCE Characteristics
2 Elements
in
Total
Per
Element
160
A
µ
140
A
µ
µ
µ
µ
µ
µ
µ


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