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UPA811T Datasheet(PDF) 1 Page - NEC

Part No. UPA811T
Description  HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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UPA811T Datasheet(HTML) 1 Page - NEC

   
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©
1996
DATA SHEET
PACKAGE DRAWINGS
(Unit: mm)
SILICON TRANSISTOR
The
µPA811T has built-in 2 low-voltage transistors which are designed to
amplify low noise in the VHF band to the UHF band.
FEATURES
Low Noise
NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
High Gain
|S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
A Small Mini Mold Package Adopted
Built-in 2 Transistors (2
× 2SC4228)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
µPA811T
Loose products
Embossed tape 8 mm wide. Pin 6 (Q1
(50 PCS)
Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µPA811T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
PT
150 in 1 element
mW
200 in 2 elementsNote
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150
˚C
Note
110 mW must not be exceeded in 1 element.
µPA811T
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2
××××× 2SC4228) SMALL MINI MOLD
Document No. P11464EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
The information in this document is subject to change without notice.
PIN CONFIGURATION (Top View)
PIN CONNECTIONS
1. Collector (Q1)
2. Base (Q2)
3. Collector (Q2)
4. Emitter (Q2)
5. Emitter (Q1)
6. Base (Q1)
6
5
4
1
2
3
Q1
Q2
2.1±0.1
1.25±0.1


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