UPA809T datasheet(2/10 Pages) NEC

Part #	UPA809T

Description	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

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Manufacturer	NEC [NEC]

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µPA809T

2

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

PARAMETER

SYMBOL

CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cutoff Current

ICBO

VCB = 5 V, IE = 0

0.1

µA

Emitter Cutoff Current

IEBO

VEB = 1 V, IC = 0

0.1

µA

DC Current Gain

hFE

VCE = 1 V, IC = 3 mANote 1

80

160

Gain Bandwidth Product (1)

fT

VCE = 1 V, IC = 3 mA, f = 2 GHz

4.0

4.5

GHz

Gain Bandwidth Product (2)

fT

VCE = 3 V, IC = 20 mA, f = 2 GHz

9.0

GHz

Feed-back Capacitance

Cre

VCB = 1 V, IE = 0, f = 1 MHzNote 2

0.75

0.85

pF

Insertion Power Gain (1)

|S21|2

VCE = 1 V, IC = 3 mA, f = 2 GHz

2.5

3.5

dB

Insertion Power Gain (2)

|S21|2

VCE = 3 V, IC = 20 mA, f = 2 GHz

6.5

dB

Noise Figure (1)

NF

VCE = 1 V, IC = 3 mA, f = 2 GHz

1.7

2.5

dB

Noise Figure (2)

NF

VCE = 3 V, IC = 7 mA, f = 2 GHz

1.5

dB

hFE Ratio

hFE1/hFE2

VCE = 1 V, IC = 3 mA

0.85

A smaller value among

hFE of hFE1 = Q1, Q2

A larger value among

hFE of hFE2 = Q1, Q2

Notes 1. Pulse Measurement: Pw

≤ 350

µs, Duty cycle ≤ 2 %

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE CLASSIFICATION

Rank

KB

Marking

T88

hFE Value

80 to 160

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