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UPA809T Datasheet(PDF) 2 Page - NEC |
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UPA809T Datasheet(HTML) 2 Page - NEC |
2 / 10 page µPA809T 2 ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT Collector Cutoff Current ICBO VCB = 5 V, IE = 0 0.1 µA Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 0.1 µA DC Current Gain hFE VCE = 1 V, IC = 3 mANote 1 80 160 Gain Bandwidth Product (1) fT VCE = 1 V, IC = 3 mA, f = 2 GHz 4.0 4.5 GHz Gain Bandwidth Product (2) fT VCE = 3 V, IC = 20 mA, f = 2 GHz 9.0 GHz Feed-back Capacitance Cre VCB = 1 V, IE = 0, f = 1 MHzNote 2 0.75 0.85 pF Insertion Power Gain (1) |S21|2 VCE = 1 V, IC = 3 mA, f = 2 GHz 2.5 3.5 dB Insertion Power Gain (2) |S21|2 VCE = 3 V, IC = 20 mA, f = 2 GHz 6.5 dB Noise Figure (1) NF VCE = 1 V, IC = 3 mA, f = 2 GHz 1.7 2.5 dB Noise Figure (2) NF VCE = 3 V, IC = 7 mA, f = 2 GHz 1.5 dB hFE Ratio hFE1/hFE2 VCE = 1 V, IC = 3 mA 0.85 A smaller value among hFE of hFE1 = Q1, Q2 A larger value among hFE of hFE2 = Q1, Q2 Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 % 2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. hFE CLASSIFICATION Rank KB Marking T88 hFE Value 80 to 160 |
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